Datasheet

AOK27S60
600V 27A α MOS
TM
Power Transistor
General Description
Product Summary
The AOK27S60 has been fabricated using the advanced
αMOSTM high voltage process that is designed to deliver
high levels of performance and robustness in switching
applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply designs.
VDS @ Tj,max
700V
IDM
110A
RDS(ON),max
0.16Ω
Qg,typ
26nC
Eoss @ 400V
6µJ
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOK27S60L
Top View
TO-247
D
G
S
AOK27S60
G
D S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
AOK27S60
600
Units
V
±30
V
27
ID
17
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
7.5
A
Repetitive avalanche energy C
EAR
110
mJ
Single pulsed avalanche energy G
TC=25°C
Power Dissipation B Derate above 25oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
EAS
480
mJ
110
PD
dv/dt
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Symbol
RθJA
Maximum Case-to-sink A
Maximum Junction-to-Case
Rev 0: Dec 2011
RθCS
RθJC
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357
W
2.9
100
20
-55 to 150
W/ oC
300
°C
AOK27S60
Units
V/ns
°C
40
°C/W
0.5
0.35
°C/W
°C/W
Page 1 of 6
AOK27S60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ID=250µA, VGS=0V, TJ=25°C
600
-
-
ID=250µA, VGS=0V, TJ=150°C
650
700
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
-
-
1
VDS=480V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
2.5
3.3
4
nΑ
V
RDS(ON)
Static Drain-Source On-Resistance
VSD
Diode Forward Voltage
IS
ISM
VGS=10V, ID=13.5A, TJ=25°C
-
0.14
0.16
Ω
VGS=10V, ID=13.5A, TJ=150°C
-
0.38
0.44
Ω
IS=13.5A,VGS=0V, TJ=25°C
-
0.85
-
V
Maximum Body-Diode Continuous Current
-
-
27
A
Maximum Body-Diode Pulsed Current
-
-
110
A
-
1294
-
pF
-
80
-
pF
-
69
-
pF
-
221
-
pF
VGS=0V, VDS=100V, f=1MHz
-
2.3
-
pF
VGS=0V, VDS=0V, f=1MHz
-
4.7
-
Ω
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
-
26
-
nC
-
6.2
-
nC
Gate Drain Charge
-
8.8
-
nC
Turn-On DelayTime
-
31
-
ns
-
33
-
ns
-
99
-
ns
-
34
-
ns
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
VGS=10V, VDS=480V, ID=13.5A
VGS=10V, VDS=400V, ID=13.5A,
RG=25Ω
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=13.5A,dI/dt=100A/µs,VDS=400V
-
440
-
ns
Irm
IF=13.5A,dI/dt=100A/µs,VDS=400V
-
28
-
Qrr
Body Diode Reverse Recovery Charge IF=13.5A,dI/dt=100A/µs,VDS=400V
-
7.5
-
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=4A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Dec 2011
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Page 2 of 6
AOK27S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
55
10V
50
45
7V
40
35
30
5.5V
20
5.5V
15
20
15
6V
25
6V
25
7V
30
ID (A)
ID (A)
10V
35
10
5V
10
5V
5
VGS=4.5V
VGS=4.5V
5
0
0
0
5
10
15
0
20
5
10
15
20
VDS (Volts)
Figure 2: On-Region [email protected]°C
VDS (Volts)
Figure 1: On-Region [email protected]°C
0.5
1000
VDS=20V
-55°C
0.4
100
RDS(ON) (Ω )
125°C
ID(A)
10
1
25°C
VGS=10V
0.3
0.2
0.1
0.1
0.0
0.01
2
4
6
8
0
10
20
30
40
50
60
ID (A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
VGS(Volts)
Figure 3: Transfer Characteristics
1.2
3
2.5
VGS=10V
ID=13.5A
BVDSS (Normalized)
Normalized On-Resistance
10
2
1.5
1
1.1
1
0.9
0.5
0
-100
-50
0
50
100
150
200
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
Rev 0: Dec 2011
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0.8
-100
-50
0
50
100
150
200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
Page 3 of 6
AOK27S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1.0E+02
1.0E+01
125°C
12
VDS=480V
ID=13.5A
25°C
1.0E-01
VGS (Volts)
IS (A)
1.0E+00
1.0E-02
1.0E-03
1.0E-04
9
6
3
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 7: Body-Diode Characteristics (Note E)
0
0
5
10
15
20
25
30
35
40
Qg (nC)
Figure 8: Gate-Charge Characteristics
10000
12
Ciss
Eoss(uJ)
Capacitance (pF)
10
1000
Coss
100
Eoss
8
6
4
Crss
10
2
0
1
0
100
200
300
400
500
VDS (Volts)
Figure 9: Capacitance Characteristics
600
0
100
200
300
400
VDS (Volts)
Figure 10: Coss stored Energy
500
600
1000
ID (Amps)
100
10µs
RDS(ON)
limited
10
100µs
1
1ms
10ms
DC
0.1
TJ(Max)=150°C
TC=25°C
0.01
1
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOK27S60 (Note F)
Rev 0: Dec 2011
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Page 4 of 6
AOK27S60
500
30
400
25
Current rating ID(A)
EAS(mJ)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
200
100
20
15
10
5
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Avalanche energy
150
175
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.35°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
0.01
T
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOK27S60 (Note F)
Rev 0: Dec 2011
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Page 5 of 6
AOK27S60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev 0: Dec 2011
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6