Datasheet

AOK8N80
800V,7.4A N-Channel MOSFET
General Description
Product Summary
The AOK8N80 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this part can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
[email protected]
7.4A
RDS(ON) (at VGS=10V)
< 1.63Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOK8N80L
Top View
D
TO-247
G
S
G
S
D
AOK8N80
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
ID
AOK8N80
800
Units
V
±30
V
7.4
4.6
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
3.8
A
Repetitive avalanche energy C
EAR
217
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
EAS
dv/dt
433
5
245
mJ
V/ns
W
2
-55 to 150
W/ oC
°C
300
°C
AOK8N80
40
0.5
0.51
Units
°C/W
°C/W
°C/W
Rev0: Jul 2012
PD
TJ, TSTG
TL
Symbol
RθJA
RθCS
RθJC
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26
Page 1 of 5
AOK8N80
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
800
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
900
V
ID=250µA, VGS=0V
0.86
V/ oC
VDS=800V, VGS=0V
1
VDS=640V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=4A
gFS
Forward Transconductance
VDS=40V, ID=4A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
ISM
3.9
4.5
nΑ
V
1.35
1.63
Ω
1
V
Maximum Body-Diode Continuous Current
7.4
A
Maximum Body-Diode Pulsed Current
26
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
±100
µA
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
3.3
9
S
0.72
1100
1375
1650
pF
VGS=0V, VDS=25V, f=1MHz
70
101
132
pF
6
11
16
pF
VGS=0V, VDS=0V, f=1MHz
1.7
3.5
5.3
Ω
26
32
nC
SWITCHING PARAMETERS
Qg
Total Gate Charge
20
VGS=10V, VDS=640V, ID=8A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=8A,dI/dt=100A/µs,VDS=100V
380
484
585
Qrr
Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V
4.5
6
7.5
Body Diode Reverse Recovery Time
VGS=10V, VDS=400V, ID=8A,
RG=25Ω
7.3
nC
9.1
nC
35
ns
51
ns
69
ns
41
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.8A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Jul 2012
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Page 2 of 5
AOK8N80
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
15
VDS=40V
10V
12
-55°C
10
6.5V
ID(A)
ID (A)
9
6V
125°C
6
1
5.5V
3
25°C
VGS=5V
0
0
5
10
15
20
25
0.1
30
2
VDS (Volts)
Fig 1: On-Region Characteristics
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
3
Normalized On-Resistance
3.0
2.5
RDS(ON) (Ω)
4
2.0
VGS=10V
1.5
1.0
2
4
6
8
10
VGS=10V
ID=4A
2
1.5
1
0.5
0
-100
0.5
0
2.5
12
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.0E+02
1.0E+00
40
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
1
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
0.9
1.0E-04
0.8
-100
1.0E-05
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev0: Jul 2012
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AOK8N80
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VDS=640V
ID=8A
Ciss
1000
Capacitance (pF)
VGS (Volts)
12
9
6
Coss
100
Crss
10
3
0
1
0
8
16
24
32
40
0.1
1
100
100
10
8
6
4
10µs
RDS(ON)
limited
10
100µs
ID (Amps)
Current rating ID(A)
10
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1
1ms
DC
10ms
0.1
2
TJ(Max)=150°C
TC=25°C
0
0
25
50
75
100
125
150
0.01
1
TCASE (°C)
Figure 9: Current De-rating (Note B)
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOK5N100 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.51°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOK5N100 (Note F)
Rev0: Jul 2012
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Page 4 of 5
AOK8N80
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev0: Jul 2012
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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