Datasheet

AOL1242
40V N-Channel MOSFET
General Description
Product Summary
The AOL1242 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
VDS
40V
69A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 5.2mΩ
RDS(ON) (at VGS = 4.5V)
< 7.9mΩ
100% UIS Tested
100% Rg Tested
Top View
D
UltraSO-8TM
Bottom View
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
V
A
205
14
IDSM
TA=70°C
±20
54
IDM
TA=25°C
Units
V
69
ID
TC=100°C
C
Maximum
40
A
11
Avalanche Current C
IAS, IAR
40
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
80
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: July 2011
2.1
Steady-State
Steady-State
RθJA
RθJC
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W
1.3
TJ, TSTG
Symbol
t ≤ 10s
W
34
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
68
PD
TC=100°C
-55 to 175
Typ
20
50
1.8
°C
Max
25
60
2.2
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOL1242
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Max
40
1
TJ=55°C
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS,ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
205
Units
V
VDS=40V, VGS=0V
VGS(th)
100
nA
1.8
2.3
V
4.2
5.2
6.9
8.5
VGS=4.5V, ID=20A
6.1
7.9
VGS=10V, ID=20A
RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
70
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
mΩ
mΩ
S
1
V
69
A
1080
1350
1620
pF
280
405
530
pF
7
26
45
pF
1
2
3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
15
19
23
nC
Qg(4.5V) Total Gate Charge
5
8
11
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=20A
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
4.5
nC
2.3
nC
6
ns
2.5
ns
23
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
10
15.5
21
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
21
31
41
4
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: July 2011
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Page 2 of 6
AOL1242
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
VDS=5V
4.5V
80
3.5V
80
7V
60
ID(A)
ID (A)
60
3V
40
125°C
40
25°C
20
20
VGS=2.5V
0
0
0
1
2
3
4
0
5
8
2
3
4
5
6
Normalized On-Resistance
2.2
7
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
6
5
4
VGS=10V
3
2
VGS=10V
ID=20A
1.8
17
5
2
VGS=4.5V10
1.6
1.4
1.2
ID=20A
1
0.8
2
0
0
10
20
30
40
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
15
1.0E+02
ID=20A
1.0E+01
12
40
125°C
9
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
6
1.0E-01
125°C
1.0E-02
1.0E-03
3
25°C
25°C
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: July 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOL1242
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
VDS=20V
ID=20A
1600
Ciss
1400
Capacitance (pF)
VGS (Volts)
8
6
4
1200
1000
Coss
800
600
400
2
Crss
200
0
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
0
10
15
20
25
30
35
VDS (Volts)
Figure 8: Capacitance Characteristics
40
200
1000.0
10µs
100.0
RDS(ON)
10µs
160
100µs
10.0
1ms
10ms
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
TJ(Max)=175°C
TC=25°C
Power (W)
ID (Amps)
5
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
18Junction-to-Case
Figure 10: Single Pulse Power Rating
(Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance
10
1
40
RθJC=2.2°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: July 2011
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Page 4 of 6
AOL1242
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
10
TA=125°C
50
40
30
20
10
1
0
1
10
100
1000
0
25
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
50
75
100
150
175
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
80
70
TA=25°C
1000
60
50
Power (W)
Current rating ID(A)
125
40
30
17
5
2
10
100
10
20
10
1
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.1
10 0
1000
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
175
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: July 2011
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Page 5 of 6
AOL1242
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: July 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6