Datasheet

AOL1420
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1420 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 3.7mΩ (VGS = 10V)
RDS(ON) < 5.5mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen and Antimony Free Green Device*
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
D
D
Bottom tab
connected to
drain
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C G
Continuous Drain
Current B,G
Units
V
±20
V
85
TC=100°C B
Pulsed Drain Current
ID
63
IDM
150
TA=25°C
Continuous Drain
Current G
Maximum
30
A
19
TA=70°C
IDSM
15
Avalanche Current C
IAR
30
A
Repetitive avalanche energy L=0.1mH C
TC=25°C
EAR
112
mJ
Power Dissipation B
TA=25°C
Power Dissipation
A
100
PD
TC=100°C
2.08
PDSM
TA=70°C
Junction and Storage Temperature Range
W
50
W
1.3
TJ, TSTG
°C
-55 to 175
Thermal Characteristics
Symbol
Parameter
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Case C
Steady-State
Alpha & Omega Semiconductor, Ltd.
RθJA
RθJC
Typ
Max
Units
19.6
25
°C/W
50
0.9
60
1.5
°C/W
°C/W
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AOL1420
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Typ
30
1
TJ=55°C
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
85
VGS=10V, ID=20A
100
nA
3
V
2.9
3.7
4.4
5.5
5.5
A
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
4.4
gFS
Forward Transconductance
VDS=5V, ID=20A
106
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.72
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
3700
VGS=0V, VDS=15V, f=1MHz
mΩ
mΩ
S
1
V
85
A
4400
pF
700
pF
390
VGS=0V, VDS=0V, f=1MHz
µA
1.8
RDS(ON)
TJ=125°C
Units
V
VDS=24V, VGS=0V
VGS(th)
Coss
Max
pF
0.54
0.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
63
76
nC
Qg(4.5V) Total Gate Charge
33
40
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=4.5V, VDS=15V, ID=20A
8.6
nC
17.6
nC
12
ns
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
34
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
30
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
Turn-Off Fall Time
15.5
ns
40
ns
14
ns
41
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev3: Jun 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOL1420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
150
VDS=5V
125
50
10V
ID(A)
ID (A)
40
4.0V
100
75
125°C
30
20
50
25°C
3.5V
10
25
VGS=3V
0
0
0
1
2
3
4
1.5
5
2
8
3.5
4
4.5
Normalized On-Resistance
1.6
7
6
VGS=4.5V
5
4
VGS=10V
3
2
ID=20A
1.4
VGS=10V
VGS=4.5V
1.2
1
0.8
0
10
20
30
40
50
60
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
8
1.0E+02
125°C
1.0E+01
6
125°C
4
1.0E+00
IS (A)
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
RDS(ON) (mΩ )
2.5
ID=20A
25°C
1.0E-01
25°C
1.0E-02
1.0E-03
2
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOL1420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
VDS=15V
ID=20A
Ciss
4000
Capacitance (pF)
VGS (Volts)
8
6
4
2
3000
2000
Coss
1000
Crss
0
0
0
10
20
30
40
50
60
70
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
RDS(ON)
limited
1ms
10ms
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJA=1.5°C/W
0
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
VDS (Volts)
10
400
200
0.1
0.1
600
DC
TJ(Max)=175°C
TC=25°C
1
Power (W)
100µs
10
TJ(Max)=175°C
TC=25°C
800
100
ID (Amps)
10
1000
10µs
Zθ JC Normalized Transient
Thermal Resistance
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOL1420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
TA=25°C
100
Power Dissipation (W)
ID(A), Peak Avalanche Current
120
80
60
tA =
40
L ⋅ ID
BV − VDD
20
0
0.00001
100
80
60
40
20
0
0.0001
0.001
0.01
0
25
100
100
80
80
60
40
75
100
125
150
175
60
40
20
20
0
0.01
0
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
Zθ JA Normalized Transient
Thermal Resistance
50
TCASE (°C)
Figure 13: Power De-rating (Note B)
Power (W)
Current rating ID(A)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60 °C/W
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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AOL1420
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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