Datasheet

AON7506
30V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
VDS
30V
12A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 9.8mΩ
RDS(ON) (at VGS=4.5V)
< 15.8 mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
DFN 3x3 EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
CurrentG
C
V
A
48
12
IDSM
TA=70°C
±20
9.4
IDM
TA=25°C
Units
V
12
ID
TC=100°C
Maximum
30
A
10.5
Avalanche Current C
IAS
20
A
Avalanche energy L=0.05mH C
EAS
10
mJ
VDS Spike
VSPIKE
36
V
Power Dissipation B
100ns
TC=25°C
PD
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev0 : July 2012
3.1
Steady-State
Steady-State
RθJA
RθJC
W
2
TJ, TSTG
Symbol
t ≤ 10s
W
8
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
20.5
-55 to 150
Typ
30
60
5
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°C
Max
40
75
6
Units
°C/W
°C/W
°C/W
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AON7506
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
30
TJ=55°C
TJ=125°C
VGS=4.5V, ID=10A
gFS
Forward Transconductance
VDS=5V, ID=12A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=10V, VDS=15V, ID=12A
±100
nA
2.3
V
8
9.8
11
13.5
13
15.8
mΩ
1
V
12
A
45
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
1.8
1
mΩ
S
0.73
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
µA
5
1.3
Units
V
1
VGS=10V, ID=12A
Output Capacitance
Max
VDS=30V, VGS=0V
IDSS
Coss
Typ
542
pF
233
pF
31
pF
2
3
Ω
9
12.2
nC
4.3
5.8
nC
2.2
nC
Gate Drain Charge
1.7
nC
Turn-On DelayTime
4
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
3.5
ns
18
ns
tf
Turn-Off Fall Time
3
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=12A, dI/dt=500A/µs
9.7
Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs
11.5
ns
nC
VGS=10V, VDS=15V, RL=1.25Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0 : July 2012
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Page 2 of 6
AON7506
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
10V
VDS=5V
4.5V
4V
6V
40
40
30
ID(A)
ID (A)
30
3.5V
20
20
10
10
125°C
25°C
VGS=3V
0
0
0
1
2
3
4
0
5
16
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
2
3
4
5
6
1.6
VGS=4.5V
14
12
10
8
VGS=10V
6
4
VGS=10V
ID=12A
1.4
17
5
2
VGS=4.5V10
1.2
1
ID=10A
0.8
0
3
0
6
9
12
15
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
25
1.0E+01
ID=12A
1.0E+00
20
40
15
1.0E-01
125°C
IS (A)
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
1.0E-02
10
25°C
1.0E-03
5
25°C
1.0E-04
0
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0: July 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7506
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=15V
ID=12A
8
Ciss
Capacitance (pF)
VGS (Volts)
600
6
4
400
Coss
200
2
0
Crss
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
150
100.0
TJ(Max)=150°C
TC=25°C
10µs
10µs
RDS(ON)
limited
100µs
1ms
100ms
1.0
TJ(Max)=150°C
TC=25°C
DC
0.1
10
Power (W)
ID (Amps)
10.0
30
100
50
0.1
0.0
0
0.01
1
VDS (Volts)
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=6°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: July 2012
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Page 4 of 6
AON7506
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
25
Current rating ID(A)
Power Dissipation (W)
30
20
15
10
15
10
5
5
0
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
1000
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=75°C/W
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0: July 2012
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Page 5 of 6
AON7506
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev0: July 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6