Datasheet

AON7524
30V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON) at 2.5V VGS
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
Application
VDS
30V
28A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 3.3mΩ
RDS(ON) (at VGS=4.5V)
< 4mΩ
RDS(ON) (at VGS=2.5V)
< 5.8mΩ
Typical ESD protection
HBM Class 3B
100% UIS Tested
100% Rg Tested
• DC/DC Converters
DFN 3x3 EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current G
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
V
A
112
25
IDSM
TA=70°C
±12
22
IDM
TA=25°C
Units
V
28
ID
TC=100°C
Maximum
30
A
20
Avalanche Current C
IAS
28
A
Avalanche energy L=0.05mH C
EAS
20
mJ
VDS Spike
VSPIKE
36
V
Power Dissipation B
100ns
TC=25°C
PD
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev.1.0: March 2013
3.1
Steady-State
Steady-State
RθJA
RθJC
W
2
TJ, TSTG
Symbol
t ≤ 10s
W
12.8
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
32
-55 to 150
Typ
30
60
3.1
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°C
Max
40
75
3.9
Units
°C/W
°C/W
°C/W
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AON7524
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±10V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
TJ=125°C
TJ=125°C
VGS=4.5V, ID=18A
0.8
3.3
3
4
mΩ
4.4
5.8
mΩ
1
V
28
A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.62
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Gate resistance
mΩ
VGS=2.5V, ID=16A
103
Crss
V
4.5
VDS=5V, ID=20A
Rg
µA
1.2
2.6
Forward Transconductance
Output Capacitance
±10
3.6
gFS
Coss
µA
5
0.4
Units
V
1
VGS=10V, ID=20A
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=15V, f=1MHz
S
2250
pF
800
pF
65
pF
3.0
4.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
37
50
nC
Qg(4.5V) Total Gate Charge
16
22
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
1.5
3.2
nC
5.2
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
23
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
5
ns
3
ns
47.5
ns
11.3
ns
16
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: March 2013
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Page 2 of 6
AON7524
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
2.5V
10V
80
VDS=5V
4.5V
80
2V
60
ID(A)
ID (A)
60
125°C
40
40
25°C
20
20
VGS=1.5V
0
0
0
1
2
3
4
0
5
1
2
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
1.6
Normalized On-Resistance
VGS=2.5V
RDS(ON) (mΩ
Ω)
4
VGS=4.5V
3
VGS=10V
2
VGS=4.5V
ID=18A
1.4
VGS=10V
ID=20A
1.2
VGS=2.5V
ID=16A
1
0.8
1
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
8
1.0E+02
ID=20A
1.0E+01
125°C
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
6
4
1.0E-01
1.0E-02
25°C
1.0E-03
2
25°C
1.0E-04
1.0E-05
0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: March 2013
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7524
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=15V
ID=20A
Capacitance (pF)
VGS (Volts)
Ciss
2500
8
6
4
2
2000
1500
Coss
1000
500
0
Crss
0
0
10
20
30
40
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
30
200
10µs
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
10µs
100µs
10.0
DC
1.0
1ms
10ms
TJ(Max)=150°C
TC=25°C
100
50
0.1
0.0
0.01
150
Power (W)
ID (Amps)
10
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
5
0.1
1
10
100
0
0.0001
VDS (Volts)
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
VGS> or equal to 2.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.9°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: March 2013
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Page 4 of 6
AON7524
40
40
30
30
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10
20
10
0
0
25
50
75
100
125
0
150
0
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: March 2013
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Page 5 of 6
AON7524
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.1.0: March 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6