Datasheet

AON7534
30V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MOSFET technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
ID (at VGS=10V)
30V
30A
RDS(ON) (at VGS=10V)
< 5mΩ
RDS(ON) (at VGS = 4.5V)
< 8.5mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
DFN 3x3 EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON7534
DFN 3x3 EP
Tape & Reel
5000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
CurrentG
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
V
A
120
20
IDSM
TA=70°C
±20
23
IDM
TA=25°C
Units
V
30
ID
TC=100°C
Maximum
30
A
16
Avalanche Current C
IAS
32
A
Avalanche energy L=0.05mH C
EAS
26
mJ
VDS Spike
VSPIKE
36
V
100ns
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
PD
TA=25°C
Rev.1.0: April 2016
3
Steady-State
Steady-State
RθJA
RθJC
W
2
TJ, TSTG
Symbol
t ≤ 10s
W
9
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
23
-55 to 150
Typ
30
60
4.5
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°C
Max
40
75
5.4
Units
°C/W
°C/W
°C/W
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AON7534
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS，ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
1.8
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
0.7
±100
nA
2.2
V
4.1
5
5.6
6.8
6.7
8.5
91
0.7
1037
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
µA
5
1.4
Units
V
1
TJ=55°C
VGS(th)
Max
30
VDS=30V, VGS=0V
IGSS
Coss
Typ
mΩ
mΩ
S
1
V
28
A
1500
pF
441
pF
61
pF
1.5
2.3
Ω
15.5
22
nC
6.8
10
nC
3.0
nC
Gate Drain Charge
3.6
nC
tD(on)
Turn-On DelayTime
5.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
3.3
ns
18
ns
4.3
ns
IF=20A, dI/dt=500A/µs
12.7
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
17.2
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: April 2016
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Page 2 of 6
AON7534
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
VDS=5V
4.5V
80
80
7V
5V
4V
60
125°C
ID(A)
ID (A)
60
25°C
40
40
20
20
VGS=3.0V
0
0
0
1
2
3
4
0
5
10
2
3
4
5
6
Normalized On-Resistance
1.8
VGS=4.5V
8
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
4
VGS=10V
2
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
15
1.0E+02
ID=20A
1.0E+01
40
1.0E+00
IS (A)
RDS(ON) (mΩ
Ω)
10
125°C
125°C
1.0E-01
1.0E-02
25°C
5
1.0E-03
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: April 2016
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7534
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
VDS=15V
ID=20A
1200
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
1000
800
600
Coss
400
2
200
0
Crss
0
0
5
10
15
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
10.0
100µs
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.0
0.01
0.1
Power (W)
10µs
RDS(ON)
0.1
TJ(Max)=150°C
TC=25°C
160
10µs
100.0
ID (Amps)
5
17
5
2
10
120
80
40
1
10
100
0
0.0001
VDS (Volts)
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=5.4°C/W
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: April 2016
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Page 4 of 6
AON7534
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
Current rating ID(A)
Power Dissipation (W)
30
20
10
0
0
25
50
75
100
125
150
30
20
10
0
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
TA=25°C
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: April 2016
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Page 5 of 6
AON7534
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.1.0: April 2016
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6