BCP51; BCX51; BC51PA 45 V, 1 A PNP medium power transistors Rev. 9 — 13 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package NXP JEITA JEDEC BCP51 SOT223 SC-73 - BCP54 BCX51 SOT89 SC-62 TO-243 BCX54 BC51PA SOT1061 - - BC54PA [1] NPN complement Valid for all available selection groups. 1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 45 V IC collector current - - 1 A ICM peak collector current - - 2 A single pulse; tp 1 ms BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors Table 2. Quick reference data …continued Symbol Parameter Conditions Min Typ Max hFE DC current gain VCE = 2 V; IC = 150 mA 63 - 250 hFE selection -10 VCE = 2 V; IC = 150 mA 63 - 160 hFE selection -16 VCE = 2 V; IC = 150 mA 100 - 250 Unit 2. Pinning information Table 3. Pin Pinning Description Simplified outline Graphic symbol SOT223 1 base 2 collector 3 emitter 4 collector 2, 4 4 1 1 2 3 3 sym028 SOT89 1 emitter 2 collector 3 base 2 3 3 2 1 1 006aaa231 SOT1061 1 base 2 emitter 3 collector 3 3 1 2 1 2 sym013 Transparent top view BCP51_BCX51_BC51PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 2 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 3. Ordering information Table 4. Ordering information Type number[1] Package Name Description Version BCP51 SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 BCX51 SC-62 plastic surface-mounted package; collector pad for good SOT89 heat transfer; 3 leads BC51PA HUSON3 plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 2 0.65 mm [1] SOT1061 Valid for all available selection groups. 4. Marking Table 5. BCP51_BCX51_BC51PA Product data sheet Marking codes Type number Marking code BCP51 BCP51 BCP51-10 BCP51/10 BCP51-16 BCP51/16 BCX51 AA BCX51-10 AC BCX51-16 AD BC51PA BP BC51-10PA BQ BC51-16PA BR All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 3 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 45 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector - 5 V IC collector current - 1 A ICM peak collector current - 2 A IB base current - 0.3 A IBM peak base current single pulse; tp 1 ms - 0.3 A Ptot total power dissipation Tamb 25 C [1] - 0.65 W [2] - 1.00 W [3] - 1.35 W [1] - 0.50 W [2] - 0.95 W [3] - 1.35 W [1] - 0.42 W [2] - 0.83 W [3] - 1.10 W [4] - 0.81 W [5] - 1.65 W single pulse; tp 1 ms BCP51 BCX51 BC51PA BCP51_BCX51_BC51PA Product data sheet Tj junction temperature - 150 C Tamb ambient temperature 55 +150 C Tstg storage temperature 65 +150 C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2. All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 4 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aac674 1.5 006aac675 1.5 (1) (1) Ptot (W) Ptot (W) (2) 1.0 (2) 1.0 (3) (3) 0.5 0.5 0.0 –75 –25 25 75 0.0 –75 125 175 Tamb (°C) –25 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 6 cm2 (1) FR4 PCB, mounting pad for collector 6 cm2 cm2 (2) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, mounting pad for collector 1 (3) FR4 PCB, standard footprint Fig 1. (3) FR4 PCB, standard footprint Power derating curves SOT223 Fig 2. Power derating curves SOT89 006aac676 2.0 Ptot (W) (1) 1.5 (2) 1.0 (3) (4) 0.5 (5) 0.0 –75 –25 25 75 125 175 Tamb (°C) (1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2 (2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2 (3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2 (4) FR4 PCB, 4-layer copper, standard footprint (5) FR4 PCB, single-sided copper, standard footprint Fig 3. Power derating curves SOT1061 BCP51_BCX51_BC51PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 5 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 192 K/W [2] - - 125 K/W [3] - - 93 K/W [1] - - 250 K/W [2] - - 132 K/W [3] - - 93 K/W [1] - - 298 K/W [2] - - 151 K/W [3] - - 114 K/W [4] - - 154 K/W [5] - - 76 K/W BCP51 - - 16 K/W BCX51 - - 16 K/W BC51PA - - 20 K/W BCP51 BCX51 BC51PA Rth(j-sp) BCP51_BCX51_BC51PA Product data sheet thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2. All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 6 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aac677 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values 006aac678 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 1 0 10–1 10–5 0.02 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values BCP51_BCX51_BC51PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 7 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aac679 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 1 0 10–1 10–5 0.02 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values 006aac680 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.2 102 0.1 0.05 10 0.02 0.01 1 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values BCP51_BCX51_BC51PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 8 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aac681 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.2 102 0.1 10 0.05 0.02 0.01 1 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values 006aac682 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 1 0 10–1 10–5 0.02 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values BCP51_BCX51_BC51PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 9 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aac683 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.25 0.2 102 0.1 0.05 10 0.02 1 0.01 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, single-sided copper, standard footprint Fig 10. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values 006aac684 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 1 0.01 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2 Fig 11. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values BCP51_BCX51_BC51PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 10 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aac685 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.25 0.2 102 0.1 10 1 0 10–1 10–5 0.05 0.02 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2 Fig 12. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values 006aac686 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.25 0.33 0.2 0.1 10 0.05 0.02 1 0 10–1 10–5 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, 4-layer copper, standard footprint Fig 13. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values BCP51_BCX51_BC51PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 11 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aac687 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.25 10 0.1 1 0 10–1 10–5 0.33 0.2 0.05 0.02 0.01 10–4 10–3 10–2 10–1 1 102 10 103 tp (s) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2 Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 30 V; IE = 0 A - - 100 nA VCB = 30 V; IE = 0 A; Tj = 150 C - - 10 A IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 2 V 63 - - 63 - 250 40 - - 63 - 160 IC = 5 mA IC = 150 mA IC = 500 mA DC current gain Product data sheet VCE = 2 V hFE selection -10 IC = 150 mA hFE selection -16 IC = 150 mA 100 - 250 - - 0.5 V - - 1 V VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA [1] VBE base-emitter voltage VCE = 2 V; IC = 500 mA [1] Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - 15 - pF fT transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz - 145 - MHz [1] BCP51_BCX51_BC51PA [1] Pulse test: tp 300 s; = 0.02. All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 12 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aac688 300 006aaa230 −1.6 IB (mA) = −45 −40.5 −36 IC (A) hFE −31.5 −27 −22.5 −1.2 (1) 200 −18 −13.5 (2) 100 −0.8 −9 −4.5 (3) −0.4 0 –10–4 –10–3 –10–2 –10–1 0 –1 –10 0 IC (A) VCE = 2 V −0.4 −0.8 −1.2 −1.6 −2.0 VCE (V) Tamb = 25 C (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = 55 C Fig 15. DC current gain as a function of collector current; typical values 006aac689 –1.2 Fig 16. Collector current as a function of collector-emitter voltage; typical values 006aac690 –10 VCEsat (V) VBE (V) (1) –1 –0.8 (2) (3) –0.4 (1) –10–1 (2) (3) 0.0 –10–1 –1 –10 –102 –103 –104 IC (mA) VCE = 2 V –10–2 –10–1 –1 (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 55 C Fig 17. Base-emitter voltage as a function of collector current; typical values Product data sheet –102 –103 –104 IC (mA) IC/IB = 10 (1) Tamb = 55 C BCP51_BCX51_BC51PA –10 Fig 18. Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 13 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 6.7 6.3 3.1 2.9 1.8 1.5 4 1.1 0.7 7.3 6.7 3.7 3.3 1 2 3 0.32 0.22 0.8 0.6 2.3 4.6 Dimensions in mm 04-11-10 Fig 19. Package outline SOT223 (SC-73) 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 2 1.2 0.8 3 0.53 0.40 1.5 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig 20. Package outline SOT89 (SC-62/TO-243) BCP51_BCX51_BC51PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 14 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 1.3 0.65 max 0.35 0.25 1 1.05 0.95 2 0.45 0.35 1.1 0.9 0.3 0.2 2.1 1.9 3 1.6 1.4 Dimensions in mm 2.1 1.9 09-11-12 Fig 21. Package outline SOT1061 (HUSON3) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number[2] Package BCP51 SOT223 BCX51 BC51PA BCP51_BCX51_BC51PA Product data sheet Description Packing quantity 8 mm pitch, 12 mm tape and reel SOT89 SOT1061 - -135 8 mm pitch, 12 mm tape and reel; T1 -115 - -135 8 mm pitch, 12 mm tape and reel; T3 [4] -146 - - - -115 - 4 mm pitch, 8 mm tape and reel For further information and the availability of packing methods, see Section 14. Valid for all available selection groups. T1: normal taping T3: 90 rotated taping 4000 -115 [2] [4] 3000 [3] [1] [3] 1000 All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 15 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 11. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 22. Reflow soldering footprint SOT223 (SC-73) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 1.9 (3×) 2.7 preferred transport direction during soldering 2.7 1.1 1.9 (2×) sot223_fw Fig 23. Wave soldering footprint SOT223 (SC-73) BCP51_BCX51_BC51PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 16 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 4.85 solder paste occupied area 1.1 (2×) 1 (3×) 1.5 Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig 24. Reflow soldering footprint SOT89 (SC-62/TO-243) 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.3 sot089_fw Fig 25. Wave soldering footprint SOT89 (SC-62/TO-243) BCP51_BCX51_BC51PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 17 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 2.1 1.3 0.5 (2×) 0.4 (2×) 0.5 (2×) 0.6 (2×) 1.05 2.3 0.6 0.55 0.25 1.1 0.25 1.2 0.25 0.4 0.5 1.6 1.7 Dimensions in mm solder paste = solder lands solder resist occupied area sot1061_fr Reflow soldering is the only recommended soldering method. Fig 26. Reflow soldering footprint SOT1061 (HUSON3) BCP51_BCX51_BC51PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 18 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BCP51_BCX51_BC51PA v.9 20111013 Product data sheet - Modifications: • • • • • • • • • BC636_BCP51_BCX51 v.8 Deleted type number BC636 Added Type number BC51PA Section 1 “Product profile”: updated Table 6 and 7: updated according to latest measurements Figure 1 to 9, 15, 17, 18 and 21: updated Figure 10 to 14: added Section 8 “Test information”: added Section 11 “Soldering”: added Section 13 “Legal information”: updated BC636_BCP51_BCX51 v.8 20080222 Product data sheet - BC636_BCP51_BCX51 v.7 BC636_BCP51_BCX51 v.7 20070629 Product data sheet - BC636_BCP51_BCX51 v.6 BC636_BCP51_BCX51 v.6 20060329 Product data sheet - BC636_638_640 v.5 BCP51_52_53 v.5 BCX51_52_53 v.4 BC636_638_640 v.5 20041011 Product specification - BC636_638_640 v.4 BCP51_52_53 v.5 20030206 Product specification - BCP51_52_53 v.4 BCX51_52_53 v.4 20011010 Product specification - BCX51_52_53 v.3 BCP51_BCX51_BC51PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 19 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from competent authorities. BCP51_BCX51_BC51PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 20 of 22 BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BCP51_BCX51_BC51PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 13 October 2011 © NXP B.V. 2011. All rights reserved. 21 of 22 NXP Semiconductors BCP51; BCX51; BC51PA 45 V, 1 A PNP medium power transistors 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 12 Test information . . . . . . . . . . . . . . . . . . . . . . . . 14 Quality information . . . . . . . . . . . . . . . . . . . . . 14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 Packing information . . . . . . . . . . . . . . . . . . . . 15 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 19 Legal information. . . . . . . . . . . . . . . . . . . . . . . 20 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Contact information. . . . . . . . . . . . . . . . . . . . . 21 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 13 October 2011 Document identifier: BCP51_BCX51_BC51PA