Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF5305
Preliminary
POWER MOSFET
-31A, -55V P-CHANNEL POWER
MOSFET
„
DESCRIPTION
The UTC UF5305 is a P-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UF5305 is suitable for all commercial-industrial
applications, etc.
„
FEATURES
* RDS(ON)<0.06Ω @ VGS=-10V, ID=-16A
* High Switching Speed
* Dynamic dv/dt Rating
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF5305L-TA3-T
UF5305G-TA3-T
UF5305L-TN3-T
UF5305G-TN3-T
UF5305L-TN3-R
UF5305G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-220
TO-252
TO-252
1
G
G
G
Pin Assignment
2
D
D
D
3
S
S
S
Packing
Tube
Tube
Tape Reel
1 of 6
QW-R502-842,b
UF5305
„
Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-55
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
VGS=-10V, TC=25°C
-31
A
Continuous
ID
VGS=-10V, TC=100°C
-22
A
Pulsed (Note 2)
IDM
-110
A
Avalanche Current (Note 2)
IAR
-16
A
280
mJ
Single Pulse (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
11
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-5.0
V/ns
Power Dissipation (TC=25°C)
PD
110
W
Linear Derating Factor
0.71
W/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. VDD=-25V, Starting TJ=25°C, L=2.1mH, RG=25Ω, IAS=-16A.
4. ISD≤-16A, di/dt≤-280A/µs, VDD≤BVDSS, TJ≤150°C
„
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
62
1.4
UNIT
°C/W
°C/W
2 of 6
QW-R502-842,b
UF5305
„
Preliminary
POWER MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
VGS=0V, ID=-250µA
IGSS
UNISONIC TECHNOLOGIES CO., LTD
TYP
MAX
-55
UNIT
V
-0.034
VDS=-55V, VGS=0V
VDS=-44V, VGS=0V, TJ=150°C
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Static Drain-Source On-Resistance
RDS(ON) VGS=-10V, ID=-16A (Note 2)
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250µA
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=-25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
ID=-16A, VDS=-44V, VGS=-10V
Gate-to-Source Charge
QGS
(Note 2)
Gate-to-Drain ("Miller") Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=-28V, ID=-16A, RG=6.8Ω
RD=1.6Ω (Note 2)
Turn-OFF Delay Time
tD(OFF)
Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous Source
IS
Current
Maximum Body-Diode Pulsed Current
ISM
(Note 1)
TJ=25°C, IS=-16A, VGS=0V
Drain-Source Diode Forward Voltage
VSD
(Note 2)
Body Diode Reverse Recovery Time
tRR
TJ=25°C, IF=-16A,
di/dt=-100A/µs (Note 2)
Body Diode Reverse Recovery Charge
QRR
Note: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width≤300µs; duty cycle≤2%.
www.unisonic.com.tw
MIN
∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
IDSS
Forward
Reverse
TEST CONDITIONS
-2.0
V/°C
-25
-250
100
-100
µA
µA
nA
nA
0.06
-4.0
Ω
V
1200
520
250
pF
pF
pF
63
13
29
nC
nC
nC
ns
ns
ns
ns
-31
A
-110
A
-1.4
V
110
250
ns
nC
14
66
39
63
71
170
3 of 6
QW-R502-842,b
UF5305
„
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-842,b
UF5305
„
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-842,b
UF5305
Preliminary
POWER MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
QW-R502-842,b
Similar pages