Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT23P09
Preliminary
POWER MOSFET
-23A, -100V P-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UT23P09 is a P-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UT23P09 is suitable for all commercial-industrial
applications, etc.

FEATURES
* RDS(ON)<0.117Ω @ VGS=-10V, ID=-11A
* High Switching Speed
* Dynamic dv/dt Rating

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT23P09L-TA3-T
UT23P09G-TA3-T
UT23P09L-TN3-R
UT23P09G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source

Package
TO-220
TO-252
1
G
G
Pin Assignment
2
3
D
S
D
S
Packing
Tube
Tape Reel
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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UT23P09

Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
RATINGS
UNIT
-100
V
±20
V
VGS=-10V, TC=25°C
-23
A
ID
Continuous
Drain Current
VGS=-10V, TC=100°C
-16
A
Pulsed (Note 2)
IDM
-76
A
Avalanche Current (Note 2)
IAR
-11
A
Single Pulse (Note 3)
EAS
430
mJ
Avalanche Energy
14
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-5.0
V/ns
TO-220
140
W
Power Dissipation (TC=25°C)
TO-252
35
W
PD
TO-220
1.12
W/°C
Linear Derating Factor
TO-252
0.28
W/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. L=7.1mH, IAS=-11A, RG=25Ω, Starting TJ = 25°C
4. ISD ≤ -11A, di/dt ≤ -470A/µs, VDD ≤ BVDSS, TJ ≤ 150°C
Drain-Source Voltage
Gate-Source Voltage

SYMBOL
VDSS
VGSS
THERMAL RESISTANCE
PARAMETER
TO-220
Junction to Ambient
TO-252
TO-220
Junction to Case
TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
62
110
0.89
3.57
UNIT
°C/W
°C/W
°C/W
°C/W
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
Preliminary
POWER MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
VGS=0V, ID=-250µA
IGSS
TYP
UNISONIC TECHNOLOGIES CO., LTD
MAX UNIT
-100
V
-0.11
VDS=-100V, VGS=0V
VDS=-80V, VGS=0V, TJ=150°C
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Static Drain-Source On-Resistance
RDS(ON)
VGS=-10V, ID=-11A (Note 5)
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=-25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
ID=-11A, VDS=-80V, VGS=-10V,
Gate-to-Source Charge
QGS
(Note 5)
Gate-to-Drain ("Miller") Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=-50V, ID=-11A, RG=5.1Ω
RD=4.2Ω (Note 5)
Turn-OFF Delay Time
tD(OFF)
Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous
IS
Source Current
Maximum Body-Diode Pulsed Current
ISM
(Note 2)
TJ=25°C, IS=-11A, VGS=0V
Drain-Source Diode Forward Voltage
VSD
(Note 5)
TJ=25°C, IF=-11A, di/dt=-100A/µs
Body Diode Reverse Recovery Time
trr
(Note 5)
Body Diode Reverse Recovery Charge
QRR
Note: 5. Pulse width≤300µs; duty cycle≤2%.
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MIN
∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
IDSS
Forward
Reverse
TEST CONDITIONS
-2.0
V/°C
-25
-250
100
-100
µA
µA
nA
nA
0.117
-4.0
Ω
V
1300
400
240
pF
pF
pF
97
15
51
nC
nC
nC
ns
ns
ns
ns
-23
A
-76
A
-1.6
V
150
220
ns
830
1200
nC
15
67
51
51
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
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UT23P09
Preliminary
POWER MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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