Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF5210
POWER MOSFET
-40A, -100V P-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UF5210 is a P-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UF5210 is suitable for all commercial-industrial
applications, etc.

1
TO-220
FEATURES
* RDS(ON)<0.06Ω @ VGS=-10V
* High Switching Speed
* Dynamic dv/dt Rating

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF5210L-TA3-T
UF5210G-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING INFORMATION
PACKAGE
MARKING
TO-220
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Copyright © 2014 Unisonic Technologies Co., Ltd
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UF5210

POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGSS
±20
V
VGS=-10V, TC=25°C
-40
A
Continuous
ID
Drain Current
VGS=-10V, TC=100°C
-29
A
Pulsed (Note 2)
IDM
-140
A
Avalanche Current (Note 2)
IAR
-21
A
780
mJ
Single Pulse (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
20
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-5.0
V/ns
200
W
Power Dissipation (TC=25°C)
PD
Linear Derating Factor
1.3
W/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. VDD=-25V, Starting TJ=25°C, L=3.5mH, RG=25Ω, IAS=-21A.
4. ISD≤-21A, di/dt≤-480A/µs, VDD≤BVDSS, TJ≤150°C

THERMAL RESISTANCE
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
62
0.75
UNIT
°C/W
°C/W
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
POWER MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
VGS=0V, ID=-250µA
∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
IDSS
Forward
Reverse
TEST CONDITIONS
IGSS
VDS=-100V, VGS=0V
VDS=-80V, VGS=0V, TJ=150°C
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
MIN TYP MAX UNIT
-100
V
-0.11
V/°C
-25
-250
100
-100
µA
µA
nA
nA
ON CHARACTERISTICS
Static Drain-to-Source On-Resistance
RDS(ON)
VGS=-10V, ID=-24A (Note 2)
0.06 Ω
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-2.0
-4.0 V
DYNAMIC PARAMETERS
Input Capacitance
CISS
2700
pF
VGS=0V, VDS=-25V, f=1.0MHz
Output Capacitance
COSS
790
pF
Reverse Transfer Capacitance
CRSS
450
pF
SWITCHING PARAMETERS
180 nC
Total Gate Charge
QG
ID=-21A, VDS=-80V, VGS=-10V
Gate-to-Source Charge
QGS
25 nC
(Note 2)
Gate-to-Drain ("Miller") Charge
QGD
97 nC
Turn-ON Delay Time
tD(ON)
17
ns
Rise Time
tR
86
ns
VDD=-50V, ID=-21A, RG=2.5Ω
RD=2.4Ω, (Note 2)
Turn-OFF Delay Time
tD(OFF)
79
ns
Fall Time
tF
81
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous Source
IS
-40
A
Current
Maximum Body-Diode Pulsed Current
ISM
-140 A
(Note 1)
Drain-Source Diode Forward Voltage
VSD
TJ=25°C, IS=-21A, VGS=0V (Note 2)
-1.6 V
170 260 ns
Body Diode Reverse Recovery Time
tRR
TJ=25°C, IF=-21A, di/dt=-100A/µs
(Note 2)
Body Diode Reverse Recovery Charge
QRR
1.2 1.8 µC
Intrinsic turn-on time is negligible (turn-on is dominated by
Forward Turn-On Time
tON
LS+LD)
Note: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width≤300µs; duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF5210

POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF5210

POWER MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF5210
POWER MOSFET
Drain Current, -ID (A)
Body Diode Continuous Source
Current, -IS (A)
Drain Current, -ID (µA)
Drain Current, -ID (µA)
TYPICAL CHARACTERISTICS

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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