Datasheet

UNISONIC TECHNOLOGIES CO., LTD
15N10
Power MOSFET
14.7A, 100V (D-S) N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 15N10 is an N-Channel enhancement MOSFET, it uses
UTC’s advanced technology to provide customers with a minimum
on-state resistance, high switching speed and low gate charge.
The UTC 15N10 is suitable for high efficiency switching DC/DC
converter, LCD display inverter and load switch.
„
FEATURES
* RDS(ON)=0.08Ω @VGS=10V,ID=8A
* Low gate charge (Typ=24nC)
* Low CRSS (Typ=23pF)
* High switching speed
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
15N10L-TN3-T
15N10G-TN3-T
Note:
15N10L-TN3-R
Pin Assignment: G: Gate
15N10G-TN3-R
D: Drain
S: Source
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Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-252
1
G
TO-252
G
Pin Assignment
2
3
D
S
D
S
Packing
Tube
Tape Reel
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15N10
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
14.7
A
TC=25°C, TJ=150°C
ID
Continuous
Drain Current
TC=70°C, TJ=150°C
13.6
A
Pulsed
IDM
59
A
TC=25°C
34.7
W
PD
Power Dissipation
TC=70°C
22.2
W
Operating Junction Temperature
TJ
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
Junction to Case (Note)
θJC
Note: The device mounted on 1in2 FR4 board with 2 oz copper.
„
RATINGS
3.6
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
IGSS
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=80V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
MIN TYP MAX UNIT
100
V
1
µA
+100 nA
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
Drain-Source On-State Resistance (Note)
RDS(ON)
VGS=10V, ID=8A
80 100
DYNAMIC PARAMETERS
Input Capacitance
CISS
890
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
COSS
58
Reverse Transfer Capacitance
CRSS
23
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=80V, ID=10A
24
13
Total Gate Charge
QG
Gate to Source Charge
QGS
4.6
VGS=4.5V, VDS=80V, ID=10A
Gate to Drain Charge
QGD
7.6
Gate-Resistance
RG
VDS=0V, VGS=0V, f=1MHz
0.9
Turn-ON Delay Time
tD(ON)
14
Rise Time
tR
33
VDS=50V, RL=5Ω, VGEN=10V,
RG=1Ω
Turn-OFF Delay Time
tD(OFF)
39
Fall-Time
tF
5
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=8A, VGS=0V
0.9 1.2
Note: Pulse test: pulse width≤300us, duty cycle≤2%, Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
V
mΩ
pF
pF
pF
nC
nC
nC
nC
Ω
ns
ns
ns
ns
V
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15N10
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
90%
RD
VGS
VDS
10V
10%
DUT
VGS
td(ON)
tON
Resistive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
tR
td(OFF) tF
tOFF
Resistive Switching Waveforms
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15N10
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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15N10
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
Drain Current vs. Gate Threshold Voltage
300
VDS=VGS
250
250
200
200
150
150
100
100
50
50
0
0
0
0
30
90
120
60
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
10
0.4
0.8 1.2
2.0 2.4
1.6
Gate Threshold Voltage, VTH (V)
Drain Current vs. Source to Drain Voltage
10
VGS=10V
8
Drain Current, ID (A)
Drain Current, ID (A)
„
Power MOSFET
6
4
2
8
6
4
2
0
0
0.1
0.2 0.3
0.4 0.5
Drain to Source Voltage, VDS (V)
0.6
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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