UNISONIC TECHNOLOGIES CO., LTD UT90N03 Power MOSFET 90A, 30V N-CHANNEL(D-S) POWER MOSFET DESCRIPTION The UTC UT90N03 is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance. The UTC UT90N03 is suitable for server and DC-DC converters. FEATURES * RDS(ON) < 4.5 mΩ @ VGS=10V, ID=28.8A * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UT90N03L-x-TM3-T UT90N03G-x-TM3-T TO-251 UT90N03L-x-TN3-R UT90N03G-x-TN3-R TO-252 UT90N03L-x-TND-R UT90N03G-x-TND-R TO-252D UT90N03L-x-TQ2-T UT90N03G-x-TQ2-T TO-263 UT90N03L-x-TQ2-R UT90N03G-x-TQ2-R TO-263 UT90N03G-x-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source 1 G G G G G S 2 D D D D D S Pin Assignment 3 4 5 6 7 S S S S S S G D D D 8 D Packing Tube Tape Reel Tape Reel Tube Tape Reel Tape Reel MARKING TO-251 / TO-252 / TO-252D / TO-263 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd DFN-8(5×6) 1 of 6 QW-R502-847.F UT90N03 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS RATINGS 30 ±20 90 28.8 90 90 300 90 3.13 UNIT V V A A A A mJ A A TC=25°C (Note 2, 5) ID TA=25°C (Note 3, 4) Pulsed IDM Avalanche Current Pulse (L=0.074mH) IAS Single Pulsed Avalanche Energy (L=0.074mH) EAS Continuous Source-Drain Diode TC=25°C (Note 2, 5) IS Current TA=25°C (Note 3, 4) TO-251/TO-252 187 TO-252D TC=25°C W (Note 2) Power Dissipation TO-263 220 PD DFN-8(5×6) 21 TA=25°C (Note 3, 4) 3.75 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Based on TC=25°C. 3. Surface Mounted on 1"x1" FR4 board. 4. t=10sec. 5. Calculated based on maximum junction temperature. Package limitation current is 90A. Drain Current THERMAL CHARACTERISTICS PARAMETER SYMBOL TO-251/TO-252 Junction to Ambient t≤10sec θJA TO-252D/TO-263 (Note 1, 2) DFN-8(5×6) TO-251/TO-252 TO-252D Junction to Case Steady State θJC TO-263 DFN-8(5×6) Notes: 1. Maximum under Steady State conditions is 90°C/W. 2. Surface Mounted on 1" x1" FR4 board. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 40 UNIT °C/W 40.3 0.6 0.5 6 °C/W 2 of 6 QW-R502-847.F UT90N03 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 1) Forward Transconductance (Note 1) On State Drain Current (Note 1) DYNAMIC PARAMETERS (Note 2) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge IGSS VGS(TH) RDS(ON) gFS ID(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=30V, VGS=0V VDS=30V, VGS=0V, TJ=55°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V 30 VDS=VGS, ID=250µA VGS=10V, ID=28.8A VGS=4.5V, ID=27A VDS=15V, ID=28.8A VGS=10V, VDS≥5V 1.5 TYP 2.4 2.7 160 MAX UNIT 1 V µA 10 µA +100 -100 nA nA 2.5 4.5 5.5 V mΩ mΩ S A 90 CISS COSS CRSS VGS=0V, VDS=15V, f=1.0MHz 12065 1725 970 QG VDS=15V, VGS=10V, ID=28.8A 171 257 nC 81.5 34 29 1.4 18 11 70 10 55 180 55 12 123 2.1 27 17 105 15 83 270 83 18 nC nC nC Ω ns ns ns ns ns ns ns ns 90 A 90 A 0.8 1.2 V 52 78 ns Total Gate Charge QG VDS=15V, VGS=4.5V, Gate to Source Charge QGS ID=28.8A Gate to Drain Charge QGD Gate Resistance RG f=1MHz Turn-ON Delay Time tD(ON) VDD=15V, RL=0.625Ω, Rise Time tR ID=24A, VGEN=10V, RG=1Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF Turn-ON Delay Time tD(ON) VDD=15V, RL=0.67Ω, Rise Time tR ID=22.5A, VGEN=4.5V, Turn-OFF Delay Time tD(OFF) RG=1Ω Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS TC=25°C Maximum Body-Diode Pulsed Current ISM (Note 1) Drain-Source Diode Forward Voltage VSD IS=22A IF=20A, di/dt=100A/µs, Body Diode Reverse Recovery Time tRR TJ=25°C Notes: 1. Pulse Test: Pulse width≤300µs, Duty cycle≤2%. 2. Guaranteed by design, not subject to production testing. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN pF pF pF 3 of 6 QW-R502-847.F UT90N03 Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG 90% RD VGS VDS 10V 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR td(OFF) tF tOFF Resistive Switching Waveforms 4 of 6 QW-R502-847.F UT90N03 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-847.F UT90N03 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage 48 Drain Current, ID (A) 42 36 30 24 16 8 0 0 0.3 0.6 0.9 1.2 1.5 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-847.F