Datasheet

UNISONIC TECHNOLOGIES CO., LTD
4N30
Power MOSFET
4A, 300V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 4N30 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with a minimum
on-state resistance, low gate charge and superior switching
performance.
„
FEATURES
* RDS(ON)<2Ω @ VGS=10V, ID=4A
* High switching speed
* Typically 3.2nC low gate charge
* 100% avalanche tested
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N30L-TN3-R
4N30G-TN3-R
4N30L-TN3-T
4N30G-TN3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
1 of 3
QW-R502-850.A
4N30
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
300
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
4
A
Avalanche Current
IAR
4
A
Single Pulsed
EAS
52
mJ
Avalanche Energy
Repetitive
EAR
52
mJ
Power Dissipation
PD
1.14
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VDS=0V
Drain-Source Leakage Current
IDSS
VDS=300V
Forward
VGS=+20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=4A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDD=50V, ID=4A, IG=100µA,
Gate to Source Charge
QGS
VGS=10V
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=4A, RG=25Ω,
VGS=0~10V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=4A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
300
V
1
µA
±100 nA
±100 nA
2
4
2
V
Ω
850
250
200
pF
pF
pF
3.2
0.64
1.6
6
38
11
13
0.1
nC
nC
nC
ns
ns
ns
ns
4
16
1.48
A
A
V
2 of 3
VER.A
4N30
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
Drain Current, ID (A)
Drain Current, ID (µA)
Drain Current, ID (µA)
„
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-850.A