UNISONIC TECHNOLOGIES CO., LTD 5N25 Power MOSFET 3.8A, 250V LOGIC N-CHANNEL MOSFET DESCRIPTION The UTC 5N25 is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. It can also withstand high energy pulse in the avalanche and commutation modes. The UTC 5N25 is suitable for high efficiency switching DC/DC converter, motor control and switch mode power supply. FEATURES * RDS(ON)<1.2Ω @VGS=10V * Low gate charge ( Typ=14nC) * Low CRSS ( Typ=6.0pF) * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 5N25L-TN3-T 5N25G-TN3-T 5N25L-TN3-R 5N25G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-852.C 5N25 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 250 V Gate-Source Voltage VGSS ±20 V Continuous ID 3.8 A Drain Current Pulsed (Note 2) IDM 9 A Avalanche Current (Note 2) IAR 3.8 A Single Pulsed (Note 3) EAS 85 mJ Avalanche Energy Repetitive (Note 2) EAR 3.7 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 5.5 V/ns TA=25°C 2.5 W PD Power Dissipation TC=25°C 37 W Derate above 25°C 0.29 W/°C Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=6.2mH, IAS=3.8A, VDD=50V, RG=25Ω, Starting TJ=25°C. 4. ISD≤4.5A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25°C. THERMAL CHARACTERISTICS PARAMETER SYMBOL Junction to Ambient (Note) θJA Junction to Ambient Junction to Cas θJC Note: When mounted on the minimum pad size recommended (PCB Mount) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 50 110 3.4 UNIT °C/W °C/W °C/W 2 of 6 QW-R502-852.C 5N25 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Breakdown Voltage Temperature △BVDSS/△TJ Reference to 25°C, ID=250µA Coefficient Drain-Source Leakage Current IDSS VDS=250V, VGS=0V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA V Static Drain-Source On-State Resistance GS=10V, ID=1.9A RDS(ON) (Note 1) VGS=5V, ID=1.9A Forward Transconductance gFS VDS=30V, ID=1.9A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=5V, VDS=160V, ID=4.5A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=100V, ID=4.5A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=3.8A, VGS=0V Body Diode Reverse Recovery Time tRR IS=4.5A, VGS=0V, dIF/dt=100A/µs (Note 1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300µs, Duty cycle≤2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 250 V 0.18 V/°C 1 µA +100 nA -100 nA 2 4 0.74 1.2 0.92 1.25 3.35 V Ω Ω S 250 40 6 325 50 8 pF pF pF 14 1.2 2.4 28 24 80 20 20 nC nC nC ns ns ns ns 40 80 110 90 3.8 9 1.5 95 0.3 A A V ns µC 3 of 6 QW-R502-852.C 5N25 Power MOSFET TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT 12V QG 5V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate Charge Waveforms 4 of 6 QW-R502-852.C 5N25 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-852.C 5N25 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) Drain Current, ID (µA) Drain-Source On-State Resistance Characteristics 3.5 7 3.0 6 2.5 5 VGS=10V, ID=1.9A 2.0 1.5 VGS=5V, ID=1.9A 4 3 1.0 2 0.5 1 0 0 2.5 0.5 1.0 1.5 2.0 Drain to Source Voltage, VDS (V) Body-Diode Continuous Current vs. Source to Drain Voltage 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-852.C