Datasheet

AON2260
60V N-Channel MOSFET
General Description
Product Summary
The AON2260 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
60V
6A
RDS(ON) (at VGS = 10V)
< 44mΩ
RDS(ON) (at VGS = 4.5V)
< 53mΩ
DFN 2x2B
Top View
S
D
Bottom View
D
D
D
S
Pin 1
D
Pin 1
G
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
Continuous Drain
Current
TA=25°C
Pulsed Drain Current C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Rev 0 : Dec 2011
Steady-State
A
A
30
W
1.8
TJ, TSTG
Symbol
t ≤ 10s
V
2.8
PD
TA=70°C
±20
4.7
IDM
TA=25°C
Units
V
6
ID
TA=70°C
Maximum
60
RθJA
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-55 to 150
Typ
37
66
°C
Max
45
80
Units
°C/W
°C/W
Page 1 of 5
AON2260
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Typ
Max
60
Units
V
VDS=60V, VGS=0V
1
TJ=55°C
µA
5
Gate-Body
leakage
current
The AON2260
combines
advanced
trench MOSFETVtechnology
with a low resistance package to provide
±100
extremely
nA low R
DS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
2
2.5
36
44
61.5
75
VGS=4.5V, ID=4A
42
53
mΩ
1
V
3.5
A
VGS=10V, ID=6A
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=6A
21
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz
426
pF
50
pF
pF
Ω
2.3
3.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
6.1
12
nC
Qg(4.5V) Total Gate Charge
2.6
6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=30V, ID=6A
1
mΩ
S
5
VGS=0V, VDS=0V, f=1MHz
V
1.2
nC
0.8
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
1.5
ns
trr
Body Diode Reverse Recovery Time
IF=6A, dI/dt=100A/µs
27
Qrr
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
12
ns
nC
VGS=10V, VDS=30V, RL=5Ω,
RGEN=3Ω
3
ns
2.5
ns
15
ns
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Dec. 2011
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Page 2 of 5
AON2260
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
10V
20
VDS=5V
4.5V
8V
15
3.5V
ID(A)
ID (A)
15
125°C
10
10
VGS=3V
25°C
5
5
0
0
0
1
2
3
4
0
5
60
2
3
4
5
6
Normalized On-Resistance
2
VGS=4.5V
50
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
40
VGS=10V
30
1.8
VGS=10V
ID=6A
1.6
17
5
2
10
=4.5V
1.4
1.2
VGS
ID=4A
1
0.8
20
0
3
0
6
9
12
15
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
100
1.0E+02
ID=6A
1.0E+01
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
80
60
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
40
1.0E-04
25°C
1.0E-05
20
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Dec. 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON2260
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
600
VDS=30V
ID=6A
500
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
400
300
200
2
Coss
100
Crss
0
0
0
1
2
3
4
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
6
0
10
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
60
10000
TJ(Max)=150°C
TA=25°C
100.0
1000
Power (W)
ID (Amps)
10µs
10µs
RDS(ON)
limited
10.0
100µs
1.0
1ms
17
100
10ms
TJ(Max)=150°C
TA=25°C
0.1
10
DC
0.0
1
0.01
0.1
1
10
VDS (Volts)
100
1000
1E-05
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=80°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Dec. 2011
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Page 4 of 5
AON2260
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0 : Dec. 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5