Datasheet

AON3402
20V N-Channel MOSFET
General Description
Product Summary
The AON3402 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating.This device is suitable
for use as load switch and general purpose FET
application.
VDS (V) = 20V
ID = 12.6A (VGS = 4.5V)
RDS(ON) < 13mΩ (VGS = 4.5V)
RDS(ON) < 17mΩ (VGS = 2.5V)
RDS(ON) < 26mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
100% Rg Tested
DFN 3x3
Top View
Bottom View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
B
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
±12
V
ID
10
IDM
40
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
W
2
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
3.1
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
12.6
TA=70°C
TA=25°C
Power Dissipation A
Maximum
20
RθJA
RθJL
Typ
30
65
20
°C
Max
40
80
25
Units
°C/W
°C/W
°C/W
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AON3402
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±10V
BVGSO
Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
±12
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
TJ=55°C
TJ=125°C
13
18
mΩ
mΩ
1
V
4.8
A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=4.5V, VDS=10V, ID=12A
Gate Source Charge
10.3
14.4
mΩ
IS
Qgs
V
A
17
IS=1A,VGS=0V
Gate resistance
1
26
Diode Forward Voltage
Rg
0.78
14.3
VSD
Reverse Transfer Capacitance
V
21.7
VDS=5V, ID=12A
Output Capacitance
µA
VGS=2.5V, ID=10.5A
Forward Transconductance
Crss
µA
VGS=1.8V, ID=8.5A
gFS
Coss
25
10
VGS=4.5V, ID=12A
Units
V
10
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
VDS=16V, VGS=0V
IDSS
RDS(ON)
Typ
37
0.73
S
1810
pF
232
pF
200
pF
1.6
Ω
17.9
nC
1.5
nC
Qgd
Gate Drain Charge
4.7
nC
tD(on)
Turn-On DelayTime
2.5
ns
tr
Turn-On Rise Time
7.2
ns
VGS=10V, VDS=10V, RL=1.0Ω,
RGEN=3Ω
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs
IF=12A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
49
ns
10.8
ns
20.2
ns
nC
8
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev2: Nov. 2010
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AON3402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
10
35
2.5V
4.5V
VDS=5V
2V
25
30
20
ID(A)
ID (A)
25
20
15
15
10
10
125°C
VGS=1.5V
5
5
25°C
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
25
1.6
Normalized On-Resistance
VGS=1.8V
RDS(ON) (mΩ )
20
VGS=2.5V
15
VGS=4.5V
10
5
VGS=4.5V
ID=12A
1.4
VGS=2.5V
ID=10.5A
1.2
VGS=1.8V
ID=8.5A
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
40
1.0E+01
ID=12A
35
1.0E+00
125°C
30
1.0E-01
25
20
IS (A)
RDS(ON) (mΩ )
2.5
125°C
1.0E-02
25°C
15
1.0E-03
10
25°C
1.0E-04
5
1.0E-05
0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AON3402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
5
VDS=10V
ID=12A
2500
Capacitance (pF)
VGS (Volts)
4
3
2
1
Ciss
2000
1500
1000
Coss
500
Crss
0
0
0
4
8
12
16
20
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
40
TJ(Max)=150°C
TA=25°C
100µs
1ms
10µs
30
Power (W)
RDS(ON)
limited
ID (Amps)
10.0
10
10ms
1.0
1s
0.1s
10
TJ(Max)=150°C
TA=25°C
10s
DC
0
0.001
0.1
0.1
20
1
10
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.01
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=80°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
0.001
0.00001
Ton
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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