AON6152 45V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 45V 100A RDS(ON) (at VGS=10V) < 1.15mΩ RDS(ON) (at VGS=4.5V) < 1.85mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications D DFN5x6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6152 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Avalanche Current C Avalanche energy VDS Spike Power Dissipation B L=0.3mH C 10µs TC=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: January 2015 IAS 60 A EAS 540 mJ 54 V 208 7.3 Steady-State Steady-State RθJA RθJC W 4.7 TJ, TSTG Symbol t ≤ 10s W 83 PDSM TA=70°C A 47 PD TA=25°C Power Dissipation A A 58 VSPIKE TC=100°C V 400 IDSM TA=70°C ±20 100 IDM TA=25°C Continuous Drain Current Units V 100 ID TC=100°C C Maximum 45 -55 to 150 Typ 14 40 0.45 www.aosmd.com °C Max 17 50 0.6 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.3 TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance V VGS=0V, VDS=22.5V, f=1MHz f=1MHz µA 5 VGS=10V, ID=20A VDS=5V, ID=20A Units 1 TJ=55°C Static Drain-Source On-Resistance Max 45 VDS=45V, VGS=0V IDSS RDS(ON) Typ ±100 nA 1.8 2.3 V 0.9 1.15 1.5 1.9 1.4 1.85 mΩ 1 V 100 A pF 100 0.66 mΩ S 5920 7410 8900 780 1120 1460 pF 20 75 130 pF 0.6 1.2 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 87 125 nC Qg(4.5V) Total Gate Charge 37 55 nC Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=22.5V, ID=20A 24 nC Gate Drain Charge 5.5 nC Turn-On DelayTime 16 ns 6 ns 58 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=22.5V, RL=1.125Ω, RGEN=3Ω 6.5 ns IF=20A, dI/dt=400A/µs 25 Body Diode Reverse Recovery Charge IF=20A, dI/dt=400A/µs 71 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: January 2015 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 120 VDS=5V 3.5V 100 100 4.5V 80 10V ID(A) ID (A) 80 60 40 60 125°C 40 VGS=3V 20 25°C 20 0 0 0 1 2 3 4 1 5 2 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 2 2 Normalized On-Resistance VGS=4.5V 1.5 RDS(ON) (mΩ) 3 1 VGS=10V 0.5 1.8 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 4 1.0E+02 ID=20A 1.0E+01 125°C 1.0E+00 IS (A) RDS(ON) (mΩ) 3 125°C 2 1.0E-01 1.0E-02 25°C 1.0E-03 1 1.0E-04 25°C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: January 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8000 VDS=22.5V ID=20A Ciss 8 Capacitance (pF) VGS (Volts) 6000 6 4 2 4000 2000 Coss Crss 0 0 0 20 40 60 80 100 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 30 35 40 45 800 100µs 1ms 10ms Power (W) ID (Amps) RDS(ON) limited 1.0 TJ(Max)=150°C TC=25°C 0.0 0.01 ZθJC Normalized Transient Thermal Resistance 25 TJ(Max)=150°C TC=25°C 10µs 10µs DC 10 20 1000 10.0 0.1 15 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 10 600 400 200 0.1 1 10 100 1000 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=0.6°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: January 2015 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 150 Current rating ID(A) Power Dissipation (W) 200 150 100 50 100 50 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: January 2015 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: January 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6