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KSMD11P06
KERSMI ELECTRONIC CO.,LTD.
– 60V P-channel MOSFET
Description
This P-channel MOSFET s use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
1)
2)
3)
4)
BVDSS
RDSON
ID
-60V
0.185Ω
-9.4A
Low gate charge.
Green device available.
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
TO-252
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-60
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
-9.4
Continuous Drain Current-T=100℃
-5.95
Pulsed Drain Current2
-37.6
EAS
Single Pulse Avalanche Energy3
160
PD
Power Dissipation4
38
TJ, TSTG
Operating and Storage Junction Temperature
Range
-55 to
+150
ID
A
mJ
W
℃
Thermal Characteristics
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KSMD11P06
KERSMI ELECTRONIC CO.,LTD.
– 60V P-channel MOSFET
Symbol
Parameter
Ratings
RƟJC
Thermal Resistance ,Junction to Case1
3.28
RƟJA
Thermal Resistance, Junction to Ambient1
110
Units
℃/W
Package Marking and Ordering Information
Part NO.
Marking
Package
KSMD11P06
KSMD11P060
TO-252
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-60
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
-1
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
±100
v
μA
nA
VDS=VDS, ID=250μA
-3.0
—
-5.0
V
VDS=10V,ID=6A
—
0.15
0.185
VDS=2.5V,ID=5A
—
—
—
VDS=5V,ID=12A
—
4.9
—
—
420
550
—
195
250
—
45
60
—
6.5
25
—
40
90
—
15
40
On Characteristics
VGS(th)
RDS(ON)
GFS
GATE-Source Threshold Voltage
Drain-Source On Resistance²
Forward Transconductance
Ω
--S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
td(off)
Turn-Off Delay Time
tf
Fall Time
—
45
100
Qg
Total Gate Charge
—
13
17
Qgs
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
2.0
—
Qgd
Gate-Drain “Miller” Charge
ID=6A
—
6.3
—
ns
ns
ns
ns
nC
nC
nC
—
—
-4.0
V
—
83
—
ns
—
0.26
—
nC
td(on)
Turn-On Delay Time
tr
Rise Time
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=7A,di/dt=100A/μS
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KSMD11P06
KERSMI ELECTRONIC CO.,LTD.
– 60V P-channel MOSFET
Notes:
1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
unless otherwise noted
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
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KSMD11P06
KERSMI ELECTRONIC CO.,LTD.
– 60V P-channel MOSFET
Figure 5. Capacitance Characteristics
Figure 7.Breakdown Voltage Variation
vs. Temperature
Figure 6. Gate Charge Characteristics
Figure 8.Maximum Safe Operating Area
Figure 9. Transient Thermal Response Curve
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