Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UM6K1N
Power MOSFET
SILICON N-CHANNEL
MOSFET
DESCRIPTION

The UTC UM6K1N is a silicon N-channel MOSFET. it uses
UTC’s advanced technology to provide the customers with a
minimum on state resistance, high switching speed and low gate
threshold voltage.
The UTC UM6K1N is suitable for switching and interfacing
applications.
FEATURES

* RDS(on) < 8 Ω @ VGS=4V, ID=10mA
RDS(on) < 13 Ω @ VGS=2.5V, ID=1mA
* High switching speed
* Low gate threshold voltage
SYMBOL

D1
G1
D2
G2
S1

S2
ORDERING INFORMATION
Ordering Number
Note:

UM6K1NG-AL6-R
Pin Assignment: G: Gate D: Drain
Package
SOT-363
Pin Assignment
Packing
1
2
3
4
5
6
S1 G1 D2 S2 G2 D1 Tape Reel
S: Source
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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UM6K1N

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
RATINGS
UNIT
VDSS
30
V
VGSS
±20
V
Continuous
ID
100
mA
Drain Current
Pulsed (Note 1)
IDM
200
mA
Power Dissipation (Note 2)
TC=25°C
PD
150
mW
Channel Temperature
TCH
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pw≤10µs, Duty cycle≤50%.
3. With each pin mounted on the recommended lands.

ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transfer Admittance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
|YFS|
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
MIN TYP MAX UNIT
ID=10µA, VGS=0V
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
30
VDS=3V, ID=100µA
VGS=4V, ID=10mA
VGS=2.5V, ID=1mA
VDS=3V, ID=10mA
0.8
1.0
+1
-1
5
7
20
1.5
8
13
V
µA
µA
µA
V
Ω
Ω
mS
VGS=0V, VDS=5V, f=1.0MHz
13
9
4
pF
pF
pF
VDD≈5V, VGS=5V, ID=10mA,
RGS=10Ω, RL=500Ω
15
35
80
80
ns
ns
ns
ns
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UM6K1N
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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