Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BSS84ZDW
Preliminary
Power MOSFET
0.13A, 50V P-CHANNEL
ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR

DESCRIPTION
These P-Channel enhancement mode field vertical D-MOS
transistors are in a SOT-363 SMD package, and in most applications
they require up to 0.13A DC and can deliver current up to 0.52A.
This product is particularly suited to low voltage applications
requiring a low current high side switch.

FEATURES
* RDS(ON) < 10Ω @ VGS=-4.5V, ID=-0.1A

SYMBOL

ORDERING INFORMATION

Ordering Number
Package
BSS84ZDWG-AL6-R
SOT-363
1
S1
Pin Assignment
2
3
4
5
G1 D2 S2 G2
6
D1
Packing
Tape Reel
MARKING
6
5
4
S84G
1
2
3
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-896.b
BSS84ZDW

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
-50
V
±20
V
DC
-0.13
Continuous Drain Current
ID
A
Pulse
-0.52
Power Dissipation
PD
0.36
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction to Ambient

SYMBOL
VDSS
VGSS
SYMBOL
θJA
RATINGS
350
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250µA
Zero Gate Voltage Drain Current
IDSS
VDS=-50V, VGS=0V
Gate–Body Leakage, Forward
IGSS
VDS=0V, VGS=±20V
ON CHARACTERISTICS (Note)
Gate-Threshold Voltage
VGS(TH)
VDS=VGS, ID=-1m A
Static Drain–Source On–Resistance
RDS(ON)
VGS=-4.5V, ID=-0.1A
On-State Drain Current
ID(ON)
VGS=-10 V, VDS=-5V
Forward Transconductance
gFS
VDS=-25V, ID=-0.1A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note)
Total Gate Charge
QG
VDS=-30V, VGS=-10V,
Gate Source Charge
QGS
ID=-0.1A
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=-30V, ID=-0.1A,VGS=-10V,
RG=6Ω,
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS= 0V, IS=-0.13A (Note)
Max. Diode Forward Current
IS
Pulsed Drain-Source Current
ISm
Note: Pulse test, pulse width ≤ 300us, duty cycle≤ 2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
-50
-15
±10
-0.8
-0.6
0.05
-1.7
1.2
0.6
V
Ω
A
S
73
10
5
pF
pF
pF
0.9
0.2
0.3
2.5
6.3
10
4.8
-0.8
-2
10
V
µA
µA
1.3
5
13
20
9.6
nC
nC
nC
ns
ns
ns
ns
-1.2
-0.13
-0.52
V
A
A
2 of 3
QW-R502-896.b
BSS84ZDW
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R502-896.b
Similar pages