Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UFZ34
Preliminary
Power MOSFET
28A, 60V N-CHANNEL POWER
MOSFET
„
DESCRIPTION
The UTC UFZ34 is an N-channel Power MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance, high switching speed and low gate charge.
The UTC UFZ34 is suitable for all commercial-industrial
applications, etc.
„
FEATURES
* RDS(ON)<0.042Ω @VGS=10V, ID=17A
* High switching speed
* Low gate charge
„
SYMBOL
D (2)
G (1)
S (3)
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UFZ34L-TA3-T
UFZ34G-TA3-T
UFZ34L-TM3-T
UFZ34G-TM3-T
UFZ34L-TN3-R
UFZ34G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-220
TO-251
TO-252
1
G
G
G
Pin Assignment
2
3
D
S
D
S
D
S
Packing
Tube
Tube
Tape Reel
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UFZ34
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
60
V
±20
V
28
A
TC=25°C
ID
Continuous
Drain Current
TC=100°C
20
A
Pulsed (Note 1)
IDM
112
A
Avalanche Current (Note 1)
IAR
17
A
97
mJ
Single Pulsed (Note 2)
EAS
Avalanche Energy
Repetitive (Note 1)
EAR
6.8
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
5.0
V/ns
Power Dissipation
TC=25°C
PD
68
W
Linear Derating Factor
0.46
W/°C
Junction Temperature
TJ
-55~+175
°C
Storage Temperature Range
TSTG
-55~+175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
SYMBOL
VDSS
VGSS
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATING
Junction to Ambient
θJA
62
Junction to Case
θJC
3.3
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. L=670µH, IAS=17A, RG=25Ω, Starting TJ=25°C.
3. ISD≤17A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ≤175°C.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
UNIT
°C/W
°C/W
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UFZ34
„
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
60
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V
Forward
VGS=+20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=17A
(Note 2)
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=48V, ID=17A
Gate to Source Charge
QGS
(Note 4)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=17A, RG=13Ω,
RD=1.8Ω (Note 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
IS
Current
Maximum Body-Diode Pulsed Current
ISM
(Note 1)
Drain-Source Diode Forward Voltage
VSD
TJ=25°C, IS=17A, VGS=0V
(Note 2)
Body Diode Reverse Recovery Time
tRR
TJ=25°C, IF=17A,
Body Diode Reverse Recovery Charge
di/dt=100A/µs
QRR
(Note 2)
Intrinsic turn-on time is negligible
Forward Turn-On Time
tON
(turn-on is dominated by LS+LD)
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Pulse width≤300µs, Duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP MAX UNIT
25
+100
-100
V
µA
nA
nA
4.0
V
0.042
Ω
680
220
80
pF
pF
pF
30
6.7
12
nC
nC
nC
ns
ns
ns
ns
28
A
100
A
1.3
V
63
95
ns
130
200
nC
5.1
30
22
30
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„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
90%
RD
VGS
VDS
10V
10%
DUT
VGS
td(ON)
tON
Resistive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
tR
td(OFF) tF
tOFF
Resistive Switching Waveforms
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UFZ34
„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UFZ34
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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