UNISONIC TECHNOLOGIES CO., LTD 20N15 Power MOSFET 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N15 is an N-Channel POWER MOSFET, it uses UTC’s advanced technology to provide customers with high switching speed and low gate charge. The UTC 20N15 is suitable for bridge circuits, power converters and PWM motor controls. FEATURES * RDS(on) < 0.13Ω @ VGS=10V, ID=10A * High switching speed * Low gate charge SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 20N15L-TF1-T 20N15G-TF1-T TO-220F1 20N15L-TF2-T 20N15G-TF2-T TO-220F2 20N15L-TN3-R 20N15G-TN3-R TO-252 20N15G-S08-R SOP-8 Note: Pin Assignment: G: Gate D: Drain S: Source 1 G G G S 2 D D D S Pin Assignment 3 4 5 6 S - - S - - S - - S G D D 7 D 8 D Packing Tube Tube Tape Reel Tape Reel MARKING TO-220F1 / TO-220F2 / TO-252 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd SOP-8 1 of 6 QW-R502-904.D 20N15 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 150 V Gate-Source Voltage Continuous VGSS ±20 V Continuous ID 20 A Drain Current Single Pulsed (tp≤10µs) IDM 60 A Starting TJ=25°C Single Drain–to–Source (VDD=120V, VGS=10V, 60 mJ EAS Avalanche Energy IL=20A, L=0.3mH) TO-220F1 36 W TO-220F2 38 W Power Dissipation PD TO-252 50 W SOP-8 10 W Operating Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER TO-220F1/TO-220F2 Junction to Ambient TO-252 SOP-8 TO-220F1 TO-220F2 Junction to Case TO-252 SOP-8 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 110 85 3.47 3.28 2.5 12.5 UNIT °C/W °C/W °C/W °C/W °C/W °C/W °C/W 2 of 6 QW-R502-904.D 20N15 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Reverse ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Static Drain-Source On-State Resistance Drain–Source On–Voltage DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS (Note 2) Gate-Source Leakage Current SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) VDS(ON) CISS COSS CRSS TEST CONDITIONS ID=0.25mA, VGS=0V VDS=150V, VGS=0V VDS=150V, VGS=0V, TJ=125°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V 150 VDS=VGS, ID=0.25mA VGS=10V, ID=10A VGS=10V, ID=20A 2.0 VGS=0V, VDS=25V, f=1.0MHz QG VGS=10V, VDS=75V, ID=20A QGS QGD Turn-ON Delay Time tD(ON) VDD=75V, VGS=10V, ID=20A, Rise Time tR RG=9.1Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=20A, VGS=0V (Note 1) Maximum Continuous Drain-Source Diode IS Forward Current Pulsed Drain-Source Current ISM Body Diode Reverse Recovery Time tRR IS=20A, VGS=0V, dIS/dt=100A/µs Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. Gate Charge UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 10 100 100 100 V µA µA nA nA 4.0 0.12 0.13 2.8 V Ω V 1133 1627 332 474 105 174 pF pF pF 39.1 55.9 7.5 22 11 25 77 153 33 67 49 97 nC nC nC ns ns ns ns 160 1.1 1.5 V 20 A 60 A ns µC 3 of 6 QW-R502-904.D 20N15 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-904.D 20N15 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms VGS 12V Same Type as D.U.T. 50kΩ 0.2μF QG 10V 0.3μF VDS QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate Charge Waveform Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-904.D 20N15 Power MOSFET TYPICAL CHARACTERISTICS 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 200 200 150 150 100 100 50 50 0 0 0 0.3 0.6 0.9 1.2 1.5 1.8 Gate Threshold Voltage, VTH (V) Drain Current, ID (A) Drain Current, ID (A) 0 40 80 120 160 200 Drain-Source Breakdown Voltage, BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-904.D