Datasheet

UNISONIC TECHNOLOGIES CO., LTD
20N15
Power MOSFET
20A, 150V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 20N15 is an N-Channel POWER MOSFET, it uses
UTC’s advanced technology to provide customers with high
switching speed and low gate charge.
The UTC 20N15 is suitable for bridge circuits, power
converters and PWM motor controls.

FEATURES
* RDS(on) < 0.13Ω @ VGS=10V, ID=10A
* High switching speed
* Low gate charge

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
20N15L-TF1-T
20N15G-TF1-T
TO-220F1
20N15L-TF2-T
20N15G-TF2-T
TO-220F2
20N15L-TN3-R
20N15G-TN3-R
TO-252
20N15G-S08-R
SOP-8
Note: Pin Assignment: G: Gate
D: Drain
S: Source

1
G
G
G
S
2
D
D
D
S
Pin Assignment
3 4 5 6
S - - S - - S - - S G D D
7
D
8
D
Packing
Tube
Tube
Tape Reel
Tape Reel
MARKING
TO-220F1 / TO-220F2 / TO-252
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
SOP-8
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QW-R502-904.D
20N15

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
150
V
Gate-Source Voltage
Continuous
VGSS
±20
V
Continuous
ID
20
A
Drain Current
Single Pulsed (tp≤10µs)
IDM
60
A
Starting TJ=25°C
Single Drain–to–Source
(VDD=120V, VGS=10V,
60
mJ
EAS
Avalanche Energy
IL=20A, L=0.3mH)
TO-220F1
36
W
TO-220F2
38
W
Power Dissipation
PD
TO-252
50
W
SOP-8
10
W
Operating Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
TO-220F1/TO-220F2
Junction to Ambient
TO-252
SOP-8
TO-220F1
TO-220F2
Junction to Case
TO-252
SOP-8
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
62.5
110
85
3.47
3.28
2.5
12.5
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
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20N15

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Drain–Source On–Voltage
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 2)
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VDS(ON)
CISS
COSS
CRSS
TEST CONDITIONS
ID=0.25mA, VGS=0V
VDS=150V, VGS=0V
VDS=150V, VGS=0V, TJ=125°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
150
VDS=VGS, ID=0.25mA
VGS=10V, ID=10A
VGS=10V, ID=20A
2.0
VGS=0V, VDS=25V, f=1.0MHz
QG
VGS=10V, VDS=75V, ID=20A
QGS
QGD
Turn-ON Delay Time
tD(ON)
VDD=75V, VGS=10V, ID=20A,
Rise Time
tR
RG=9.1Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=20A, VGS=0V
(Note 1)
Maximum Continuous Drain-Source Diode
IS
Forward Current
Pulsed Drain-Source Current
ISM
Body Diode Reverse Recovery Time
tRR
IS=20A, VGS=0V, dIS/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Gate Charge
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
10
100
100
100
V
µA
µA
nA
nA
4.0
0.12 0.13
2.8
V
Ω
V
1133 1627
332 474
105 174
pF
pF
pF
39.1 55.9
7.5
22
11
25
77 153
33
67
49
97
nC
nC
nC
ns
ns
ns
ns
160
1.1
1.5
V
20
A
60
A
ns
µC
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20N15

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-904.D
20N15
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

Switching Test Circuit
Switching Waveforms
VGS
12V
Same Type
as D.U.T.
50kΩ
0.2μF
QG
10V
0.3μF
VDS
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Gate Charge Waveform
Unclamped Inductive Switching Waveforms
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20N15

Power MOSFET
TYPICAL CHARACTERISTICS
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
200
200
150
150
100
100
50
50
0
0
0
0.3
0.6 0.9
1.2
1.5 1.8
Gate Threshold Voltage, VTH (V)
Drain Current, ID (A)
Drain Current, ID (A)
0
40
80
120
160
200
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-904.D
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