Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT80N06
Power MOSFET
60V, 80A N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UTT80N06 is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with a minimum on-state resistance and high switching speed. It can
also withstand high energy pluse in the avalanche and commutation
mode.
The UTC UTT80N06 is suitable for active power factor correction,
high efficient switched mode power supplies and electronic lamp
ballast based on half bridge topology, etc.

FEATURES
* RDS(ON)< 10mΩ @ VGS=10V, ID=40A
* High switching speed
* Improved dv/dt capability

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UTT80N06L-TA3-T
UTT80N06G-TA3-T
TO-220
UTT80N06L-TN3-T
UTT80N06G-TN3-T
TO-252
TO-263
UTT80N06L-TQ2-T
UTT80N06G-TQ2-T
TO-263
UTT80N06L-TQ2-R
UTT80N06G-TQ2-R
SOP-8
UTT80N06G-S08-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1
G
G
G
G
S
2
D
D
D
D
S
Pin Assignment
3 4 5 6
S - S - S S S G D D
7
D
Packing
8
Tube
- Tape Reel
Tube
- Tape Reel
D Tape Reel
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UTT80N06

Preliminary
Power MOSFET
MARKING
TO-220 / TO-252 / TO-263
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SOP-8
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UTT80N06

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) (Note 2)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
60
V
±20
V
TC=25°C
80
A
Continuous
ID
Drain Current
TC=100°C
65
A
320
A
Pulsed (Note 3)
IDM
Avalanche Current (Note 3)
IAR
80
A
Avalanche Energy Single Pulsed (Note 4)
EAS
200
mJ
Peak Diode Recovery dv/dt (Note 5)
dv/dt
3.2
V/nS
TO-220/TO-263
147
W
Power Dissipation
PD
TO-252
50
W
SOP-8
5.2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
4. L =0.06mH, IAS = 80A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C.
5. ISD ≤ 80A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C.

SYMBOL
VDSS
VGSS
THERMAL DATA
PARAMETER
TO-220/TO-263
Junction to Ambient TO-252
SOP-8
TO-220/TO-263
Junction to Case
TO-252
SOP-8
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
62.5
110
100
0.85
2.5
24
UNIT
°C/W
°C/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V, TJ=25°C
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V
Forward
VGS=+20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge at 10V
QG
VGS=10V, VDS=50V, ID=1.3A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A, RG=25Ω
Rise Time
tR
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=80A, VGS=0V
Reverse Recovery Time
trr
IS=30A, VGS=0V, dI/dt=100A/μs
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature typical characteristics
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
60
2.0
1
+100
-100
V
µA
nA
nA
4.0
10
V
mΩ
3800
375
320
pF
pF
pF
93
15
28
90
172
786
330
nC
nC
nC
ns
ns
ns
ns
80
320
1.4
74
92
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A
A
V
nS
nC
UTT80N06

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
90%
RD
VGS
VDS
10V
10%
DUT
VGS
td(ON)
tON
Resistive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
tR
td(OFF) tF
tOFF
Resistive Switching Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTT80N06
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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