Datasheet

UNISONIC TECHNOLOGIES CO., LTD
5N70Z
Power MOSFET
5A, 700V LOGIC
N-CHANNEL MOSFET

1
TO-220F1
TO-220F
DESCRIPTION
The UTC 5N70Z is an N-Channel enhancement MOSFET, it
uses UTC’s advanced technology to provide customers with a
minimum on-state resistance, high switching speed and low gate
charge. It can also withstand high energy pulse in the avalanche
and commutation modes.
The UTC 5N70Z is suitable for high efficiency switching
DC/DC converter, motor control and switch mode power supply.

1
1
1
TO-220F2
1
FEATURES
TO-252
* RDS(ON)<2.5Ω @ VGS=10V
* Low gate charge ( Typ=4.8nC)
* Low CRSS (Typ=6.0pF)
* High switching speed
* ESD Capability

TO-251
SYMBOL
D
G
S

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N70ZL-TF3-T
5N70ZG-TF3-T
5N70ZL-TF1-T
5N70ZG-TF1-T
5N70ZL-TF2-T
5N70ZG-TF2-T
5N70ZL-TM3-T
5N70ZG-TM3-T
5N70ZL-TN3-R
5N70ZG-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
Package
TO-220F
TO-220F1
TO-220F2
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
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5N70Z

Power MOSFET
MARKING INFORMATION
PACKAGE
MARKING
TO-220F
TO-220F1
TO-220F2
TO-251
TO-252
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
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±20
V
Avalanche Current (Note 2)
IAR
5
A
Continuous
ID
5
A
Drain Current
Pulsed (Note 2)
IDM
20
A
Single Pulsed (Note 3)
EAS
100
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
10
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220F/TO-220F1
36
W
TO-220F2
Power Dissipation
PD
TO-251/TO-252
28
W
Junction Temperature
TJ
+150
°C
Operation Temperature
TOPR
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=6.2mH, IAS=5A, VDD=50V, RG=25Ω, Starting TJ=25°C.
4. ISD≤4.5A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25°C

THERMAL CHARACTERISTICS
PARAMETER
TO-220F/TO-220F1
TO-220F2
Junction to Ambient
TO-251/TO-252
TO-220F/TO-220F1
TO-220F2
Junction to Case
TO-251/TO-252
SYMBOL
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θJA
θJC
RATINGS
UNIT
62.5
°C/W
110
°C/W
3.47
°C/W
4.53
°C/W
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Power MOSFE
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
ID=250µA, VGS=0V
700
IGSS
UNISONIC TECHNOLOGIES CO., LTD
V
0.18
VDS=700V, VGS=0V
VDS=560V, VGS=0V, TC=125°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=2.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Total Gate Charge
QG
VGS=5V, VDS=160V, ID=4.5A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=5A, VGS=0V
Body Diode Reverse Recovery Time
trr
IS=4.5A, VGS=0V, dIF/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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MIN TYP MAX UNIT
∆BVDSS/∆TJ Reference to 25°C, ID=250µA
IDSS
Forward
Reverse
TEST CONDITIONS
V/°C
1
10
+10
-10
µA
µA
µA
µA
2.15
4
2.5
V
Ω
420
55
9
625
65
12
pF
pF
pF
40
42
135
48
70
20
15
60
60
155
60
90
ns
ns
ns
ns
nC
nC
nC
5
20
1.4
A
A
V
ns
µC
2
95
0.3
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Power MOSFE
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
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Forward Voltage Drop
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Power MOSFE
TEST CIRCUITS AND WAVEFORMS(Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
Drain Current, ID (µA)

Power MOSFE
Drain-Source On-State Resistance
Characteristics
3
Drain Current vs. Source to Drain Voltage
6
VGS=10V, ID=2.5A
5
Drain Current, ID (A)
Drain Current, ID (A)
2.5
2
1.5
1
4
3
2
1
0.5
0
0
1
2
3
5
4
Drain to Source Voltage, VDS (V)
6
0
0
0.2
0.4 0.6
0.8 1.0 1.2
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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