Datasheet

UNISONIC TECHNOLOGIES CO., LTD
3N90Z
Preliminary
Power MOSFET
3 Amps, 900 Volts
N-CHANNEL POWER
MOSFET
„
DESCRIPTION
The UTC 3N90Z provides excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
„
FEATURES
* RDS(ON)=4.1Ω @VGS=10 V
* Ultra Low Gate Charge ( typical 22.7 nC )
* Low Reverse Transfer Capacitance ( CRSS= Typical 13 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
„
SYMBOL
„
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
3N90ZL-TF1-T
3N90ZG-TF1-T
Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0V)
VDSS
V
900
Drain-Gate Voltage (RG=20kΩ)
VDGR
V
900
Gate-Source Voltage
VGSS
±20
V
Gate-Source Breakdown Voltage (IGS=±1mA)
BVGSO
30(MIN)
V
Insulation Withstand Voltage (DC)
VISO
2500
V
Avalanche Current (Note 2)
IAR
3
A
Continuous Drain Current
ID
3
A
Pulsed Drain Current
IDM
10
A
Single Pulse Avalanche Energy (Note 3)
EAS
180
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
PD
25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. starting TJ=25 °C, ID=IAR, VDD=50V
4. ISD≦3A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX).
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
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RATING
62.5
5
UNIT
°C/W
°C/W
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„
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
900
V
Drain-Source Leakage Current
IDSS
VDS=900V, VGS=0V
1
μA
Gate-Source Leakage Current
IGSS
VGS=±20V, VDS=0V
±10 μA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
3 3.75 4.5
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1.5A
4.1 4.8
Ω
DYNAMIC CHARACTERISTICS
590
pF
Input Capacitance
CISS
Output Capacitance
COSS
63
pF
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
CRSS
13
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
18
ns
VDD=450V, ID=1.5 A, RG=4.7Ω
VGS=10V
Turn-On Rise Time
tR
7
ns
Turn-Off Delay Time
tD(OFF)
45
ns
VDD=720V, ID=1.5 A, RG=4.7Ω
VGS=10V
Turn-Off Fall Time
tF
18
ns
Total Gate Charge
QG
22.7
nC
VDD=720V, ID=3A, VGS=10V
Gate-Source Charge
QGS
4.2
nC
Gate-Drain Charge
QDD
12
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
VSD
ISD=3A ,VGS=0V
1.6
V
Source-Drain Current
ISD
3
A
Source-Drain Current (Pulsed)
ISDM
12
A
Reverse Recovery Current
IRRM
8.7
A
ISD=3A, di/dt=100A/μs,
Body Diode Reverse Recovery Time
tRR
510
ns
VDD=100V, TJ=25°C
Body Diode Reverse Recovery Charge
QRR
2.2
nC
Notes: 1. Pulse width=300μs, Duty cycle≦1.5%
2. COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0to 80% VDSS.
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www.unisonic.com.tw
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„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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3N90Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
„
Fig. 2A Switching Test Circuit
12V
Same Type
as D.U.T.
50kΩ
0.2μF
Fig. 2B Switching Waveforms
QG
10V
0.3μF
VDS
QGS
QGD
VGS
DUT
3mA
VGS
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 4A Unclamped Inductive Switching Test Circuit
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Fig. 3B Gate Charge Waveform
Fig. 4B Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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