Datasheet

UNISONIC TECHNOLOGIES CO., LTD
19N10V
Power MOSFET
100V N-Channel MOSFET
„
DESCRIPTION
The UTC 100V N-Channel enhancement mode power field
effect transistors (MOSFET) are produced by UTC’s planar stripe,
DMOS technology which has been tailored especially in the
avalanche and commutation mode to minimize on-state resistance,
provide superior switching performance, and withstand high energy
pulse. They are suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and DC motor
control.
„
FEATURES
* RDS(ON) = 0.1Ω @VGS = 10 V
* Ultra low gate charge ( typical 19nC )
* Low reverse transfer Capacitance ( CRSS = typical 32pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
19N10VL-TM3-T
19N10VG-TM3-T
19N10VL-TN3-R
19N10VG-TN3-R
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
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QW-R502-914, A
19N10V
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
± 25
V
Continuous Drain Current
ID
15.6
A
Pulsed Drain Current (Note 2)
IDM
62.4
A
Avalanche Current (Note 2)
IAR
15.6
A
Single Pulsed Avalanche Energy (Note 3)
EAS
220
mJ
Repetitive Avalanche Energy (Note 2)
EAR
5.0
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
6.0
V/ns
PD
50
W
Power Dissipation
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L=1.35mH, IAS=15.6A, VDD=25V, RG=25 Ω, Starting TJ=25°C
4. ISD≤19A, di/dt ≤ 300A/µs, VDD≤BVDSS, Starting TJ=25°C
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
50
2.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
TEST CONDITIONS
VGS=0V, ID=250µA
I =250µA,
∆BVDSS/∆TJ D
Referenced to 25°C
VDS=100V, VGS=0V
IDSS
VGS=25V, VDS=0V
IGSS
VGS=-25V, VDS=0V
BVDSS
VGS(TH)
RDS(ON)
gFS
CISS
COSS
CRSS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
VDS=VGS, ID=250µA
VGS=10V, ID=7.8A
VDS=40V, ID=7.8A (Note 1)
VDS=25V, VGS=0V, f=1.0MHz
MIN
TYP
MAX UNIT
100
V
V/°C
0.1
1
100
-100
µA
0.078
3.0
0.1
11
V
Ω
S
600
165
32
780
215
40
pF
pF
pF
1.0
nA
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19N10V
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Power MOSFET
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=80V, ID=19A, VGS=10V
Gate Source Charge
QGS
(Note 1, 2)
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=50V, ID=19A, RG=25Ω
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
VGS=0V, IS=15.6A
Maximum Body-Diode Continuous Current
IS
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Body Diode Reverse Recovery Time
tRR
VGS= 0V, IS=19A,
dI
Body Diode Reverse Recovery Charge
QRR
F/dt=100A/μs (Note 1)
Note: 1. Pulse Test : Pulse width ≤300µs, Duty cycle≤ 2%
Note: 2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
19
3.9
9.0
7.5
150
20
65
78
200
MAX UNIT
25
nC
25
310
50
140
ns
ns
ns
ns
1.5
15.6
V
A
62.4
A
ns
nC
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QW-R502-914, A
19N10V
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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QW-R502-914, A
19N10V
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
tD(ON)
Pulse Width≤ 1μs
tD(OFF)
tF
tR
Duty Factor≤0.1%
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
QG
10V
QGS
QGD
VGS
Charge
Fig. 3A Gate Charge Test Circuit
VDS
L
R
VDD
D
10V
Fig. 3B Gate Charge Waveform
D.U.T.
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-914, A
19N10V
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Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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