KSMP4449 KERSMI ELECTRONIC CO.,LTD. -30V P-channel MOSFET Description This P-channel MOSFET s use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS -30V RDSON ID 34MΩ -7A 1) 2) Low gate charge. Green device available. 3) 4) Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOP-8 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 -7 Continuous Drain Current-T=100℃ -4.6 Pulsed Drain Current2 -40 EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 3.1 TJ, TSTG Operating and Storage Junction Temperature -55 to ID Range 150 A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMP4449 KERSMI ELECTRONIC CO.,LTD. -30V P-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 40 RƟJA Thermal Resistance, Junction to Ambient1 75 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSMP4449 KSMP4449 SOP-8 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -30 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — -1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA -1 -2 -3 V VDS=10V,ID=6A — 27 34 VDS=2.5V,ID=5A — 38 — VDS=5V,ID=12A — 15 — — 980 1225 — 150 — — 115 — — 7.7 — — 6 — — 20 — On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance MΩ --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 7 — Qg Total Gate Charge — 18.7 24 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — 9.6 — Qgd Gate-Drain “Miller” Charge ID=6A — 3.2 — ns ns ns ns nC nC nC — -0.77 -1 V — 21 26 ns — 13 — nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMP4449 KERSMI ELECTRONIC CO.,LTD. -30V P-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Figure 1. On-Region Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage unless otherwise noted Figure 2. Transfer Characteristics Figure 4: On-Resistance vs. Junction Temperature www.kersemi.com 3 KSMP4449 KERSMI ELECTRONIC CO.,LTD. -30V P-channel MOSFET Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics Figure 7: Gate-Charge Characteristics Figure 8.Maximum Safe Operating Area Figure 9: Normalized Maximum Transient Thermal Impedance www.kersemi.com 4