UNISONIC TECHNOLOGIES CO., LTD 10N65T Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N65T is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. TO-220F1 FEATURES * R DS(ON) < 0.95Ω@V GS =10V * Fast switching * 100% avalanche tested * Improved dv/dt capability 1 TO-220 1 TO-220F2 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N65TL-TF3-T 10N65TG-TF3-T 10N65TL-TF1-T 10N65TG-TF1-T 10N65TL-TF2-T 10N65TG-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F TO-220F1 TO-220F2 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube 10N65TL-TF3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TF3: TO-220F, TF1: TO-220F1, TF2: TO-220F2 (3)Green Package (3) L: Lead Free, G: Halogen Free and Lead Free MARKING UTC 10N65T Lot Code L: Lead Free G: Halogen Free Data Code 1 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-878.D 10N65T Power MOSFET ABSOLUTE MAXIMUM RATINGS (T C = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ± 30 V Avalanche Current (Note 2) I AR 10 A Continuous ID 10 A Drain Current Pulsed (Note 2) I DM 38 A Single Pulsed (Note 3) E AS 90 mJ Avalanche Energy Repetitive (Note 2) E AR 15.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 156 W Power Dissipation PD TO-220F1/TO-220F2 50 W Junction Temperature TJ +150 °C Operating Temperature T OPR -55 ~ +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 1.8mH, I AS = 10A, V DD = 50V, R G = 25 Ω Starting T J = 25°C 4. I SD ≤ 9.5A, di/dt ≤200A/μs, V DD ≤BV DSS , Starting T J = 25°C THERMAL DATA PARAMETER Junction to Ambient TO-220 Junction to Case TO-220F1/TO-220F2 SYMBOL θ JA UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θ JC RATING 62.5 0.8 2.5 UNIT °C/W °C/W °C/W 2 of 6 QW-R502-878.D 10N65T Power MOSFET ELECTRICAL CHARACTERISTICS( T C =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL TEST CONDITIONS V GS =0V, I D = 250μA V DS =650V, V GS =0V Drain-Source Leakage Current I DSS V DS =520V, V GS =0V, T J =125°C Forward V GS =30V, V DS =0V Gate-Source Leakage Current I GSS Reverse V GS =-30V, V DS =0V Breakdown Voltage Temperature Coefficient ΔBV DSS /ΔT J I D =250 µA, Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS , I D =250μA Static Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =4.75A DYNAMIC CHARACTERISTICS Input Capacitance C ISS Output Capacitance C OSS V DS =25V, V GS =0V, f=1.0 MHz Reverse Transfer Capacitance C RSS SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) Turn-On Rise Time tR V DD =30V, I D =0.5A, R G =25Ω (Note1, 2) Turn-Off Delay Time t D(OFF) Turn-Off Fall Time tF Total Gate Charge QG V DS =50V, I D =10A, V GS =10V Gate-Source Charge Q GS (Note1, 2) Gate-Drain Charge Q GD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS =0V, I S =10A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode I SM Forward Current Reverse Recovery Time t rr V GS =0V, I S =10A, dI F /dt=100A/µs (Note1) Reverse Recovery Charge Q RR Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2% 2. Essentially independent of operating temperature BV DSS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 650 0.7 2.0 V 1 µA 100 µA 100 nA -100 nA V/°C 4.0 0.88 0.95 V Ω 1250 2040 120 215 13 24 pF pF pF 38 48 316 70 100 20 19 55 130 330 150 120 ns ns ns ns nC nC nC 1.4 V 10 A 38 A 420 4.2 ns µC 3 of 6 QW-R502-878.D 10N65T Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. VDD Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-878.D 10N65T Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS Same Type as D.U.T. 50kΩ 12V 0.2μF QG 10V 0.3μF VDS QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD VDD ID(t) VDS(t) VDD 10V D.U.T. tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-878.D 10N65T Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) 200 150 100 150 100 50 50 0 0 0 0 200 600 800 1000 400 Drain-Source Breakdown Voltage, BVDSS (V) Drain-Source On-State Resistance Characteristics 0.6 3.6 1.2 1.8 3 2.4 Gate Threshold Voltage, VTH (V) Drain Current vs. Source to Drain Voltage 5 12 VGS=10V, ID=4.75A 10 4 Drain Current, ID (A) Drain Current, ID (A) 200 3 2 1 8 6 4 2 0 0 1 2 3 4 Drain to Source Voltage, VDS (V) 5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-878.D