Datasheet

UNISONIC TECHNOLOGIES CO., LTD
10N65T
Power MOSFET
10A, 650V N-CHANNEL
POWER MOSFET
1

DESCRIPTION
The UTC 10N65T is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.

TO-220F1
FEATURES
* R DS(ON) < [email protected] GS =10V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

1
TO-220
1
TO-220F2
SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N65TL-TF3-T
10N65TG-TF3-T
10N65TL-TF1-T
10N65TG-TF1-T
10N65TL-TF2-T
10N65TG-TF2-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220F
TO-220F1
TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
10N65TL-TF3-T

(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TF3: TO-220F, TF1: TO-220F1, TF2: TO-220F2
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
UTC
10N65T
Lot Code
L: Lead Free
G: Halogen Free
Data Code
1
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-878.D
10N65T

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (T C = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V DSS
650
V
Gate-Source Voltage
V GSS
± 30
V
Avalanche Current (Note 2)
I AR
10
A
Continuous
ID
10
A
Drain Current
Pulsed (Note 2)
I DM
38
A
Single Pulsed (Note 3)
E AS
90
mJ
Avalanche Energy
Repetitive (Note 2)
E AR
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
156
W
Power Dissipation
PD
TO-220F1/TO-220F2
50
W
Junction Temperature
TJ
+150
°C
Operating Temperature
T OPR
-55 ~ +150
°C
Storage Temperature
T STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 1.8mH, I AS = 10A, V DD = 50V, R G = 25 Ω Starting T J = 25°C
4. I SD ≤ 9.5A, di/dt ≤200A/μs, V DD ≤BV DSS , Starting T J = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F1/TO-220F2
SYMBOL
θ JA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θ JC
RATING
62.5
0.8
2.5
UNIT
°C/W
°C/W
°C/W
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10N65T

Power MOSFET
ELECTRICAL CHARACTERISTICS( T C =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
V GS =0V, I D = 250μA
V DS =650V, V GS =0V
Drain-Source Leakage Current
I DSS
V DS =520V, V GS =0V, T J =125°C
Forward
V GS =30V, V DS =0V
Gate-Source Leakage Current
I GSS
Reverse
V GS =-30V, V DS =0V
Breakdown Voltage Temperature Coefficient ΔBV DSS /ΔT J I D =250 µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V GS(TH)
V DS =V GS , I D =250μA
Static Drain-Source On-State Resistance
R DS(ON)
V GS =10V, I D =4.75A
DYNAMIC CHARACTERISTICS
Input Capacitance
C ISS
Output Capacitance
C OSS
V DS =25V, V GS =0V, f=1.0 MHz
Reverse Transfer Capacitance
C RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t D(ON)
Turn-On Rise Time
tR
V DD =30V, I D =0.5A, R G =25Ω
(Note1, 2)
Turn-Off Delay Time
t D(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
V DS =50V, I D =10A, V GS =10V
Gate-Source Charge
Q GS
(Note1, 2)
Gate-Drain Charge
Q GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V SD
V GS =0V, I S =10A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
I SM
Forward Current
Reverse Recovery Time
t rr
V GS =0V, I S =10A,
dI F /dt=100A/µs (Note1)
Reverse Recovery Charge
Q RR
Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
2. Essentially independent of operating temperature
BV DSS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
650
0.7
2.0
V
1
µA
100 µA
100 nA
-100 nA
V/°C
4.0
0.88 0.95
V
Ω
1250 2040
120 215
13
24
pF
pF
pF
38
48
316
70
100
20
19
55
130
330
150
120
ns
ns
ns
ns
nC
nC
nC
1.4
V
10
A
38
A
420
4.2
ns
µC
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10N65T

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VDD
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
P.W.
Period
D=
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-878.D
10N65T
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

RL
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
Same Type
as D.U.T.
50kΩ
12V
0.2μF
QG
10V
0.3μF
VDS
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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10N65T
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)

200
150
100
150
100
50
50
0
0
0
0
200
600
800 1000
400
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
0.6
3.6
1.2 1.8
3
2.4
Gate Threshold Voltage, VTH (V)
Drain Current vs. Source to Drain Voltage
5
12
VGS=10V, ID=4.75A
10
4
Drain Current, ID (A)
Drain Current, ID (A)
200
3
2
1
8
6
4
2
0
0
1
2
3
4
Drain to Source Voltage, VDS (V)
5
0
0
0.2
0.4 0.6
0.8 1.0 1.2
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-878.D
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