Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT8205AZ
Preliminary
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE

DESCRIPTION
The UT8205AZ uses advanced technology to provide fast
switching, low on-resistance and cost-effectiveness. This device is
suitable for all commercial-industrial surface mount applications.

FEATURES
* RDS(ON) ≤ 28 mΩ @ VGS=4.5V, ID=6.0A
* Ultra low gate charge ( typical 23 nC )
* Low reverse transfer Capacitance ( CRSS = typical 150 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UT8205AZG-AG6-R
UT8205AZG-S08-R
UT8205AZG-P08-R
Pin Assignment: S: Source
Package
SOT-26
SOP-8
TSSOP-8
G: Gate
D: Drain
Pin Assignment
1 2 3 4 5 6 7 8
S1 D S2 G2 D G1 D S1 S1 G1 G2 S2 S2 D
D S1 S1 G1 G2 S2 S2 D
Packing
Tape Reel
Tape Reel
Tape Reel
MARKING
SOP-8
TSSOP-8
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Copyright © 2015 Unisonic Technologies Co., Ltd
SOT-26
1 of 3
QW-R502-886.c
UT8205AZ

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
20
V
±12
V
Continuous
6
A
Drain Current (Note 2)
20
A
Pulsed
SOT-26
1.14
W
Power Dissipation (TA=25°C) (Note 3)
PD
SOP-8
1.6
W
TSSOP-8
1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
3. Pulse width limited by TJ(MAX)

SYMBOL
VDSS
VGSS
ID
IDM
THERMAL DATA
PARAMETER
SYMBOL
SOT-26
SOP-8
TSSOP-8
Note: Pulse Test : Pulse width≤300μs, Duty cycle≤2%
Junction to Ambient (Note)

θJA
RATINGS
110
78
125
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
Breakdown Voltage Temperature
Coefficient
∆BVDSS
∆TJ
BVDSS
TEST CONDITIONS
VGS=0V, ID=250µA
IDSS
IGSS
VDS=20V, VGS=0V,
VGS=±8V
VGS(TH)
Drain-Source On-State Resistance (Note)
RDS(ON)
VDS=VGS, ID=250µA
VGS=4.5V, ID=6.0A
VGS=2.5V, ID=5.2A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=20V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time (Note)
tD(ON)
VGS=5V, VDS=10V, RD=10Ω,
Turn-ON Rise Time
tR
R
Turn-OFF Delay Time
tD(OFF)
G=6Ω, ID=1A
Turn-OFF Fall-Time
tF
Total Gate Charge(Note)
QG
VDS =20V, VGS =5V, ID =6.0A
Gate Source Charge
QGS
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
VSD
IS=1.7A, VGS=0V
Diode Continuous Forward Current
IS
VD=VG, VS=1.3V
Note: Surface mounted on 1 in2 copper pad of FR4 board.
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TYP
MAX UNIT
20
ID=1mA, Reference to 25°C
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
UNISONIC TECHNOLOGIES CO., LTD
MIN
V
0.03
0.5
V/°C
1
±10
μA
μA
1.5
28
38
V
mΩ
mΩ
1035
320
150
pF
pF
pF
30
70
40
65
23
4.5
7
ns
ns
ns
ns
nC
nC
nC
1.2
1.54
V
A
2 of 3
QW-R502-886.c
UT8205AZ
Preliminary
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
3 of 3
QW-R502-886.c
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