Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF9520S
Preliminary
POWER MOSFET
-6.8A, -100V P-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC UF9520S is a P-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UF9520S is suitable for high current applications, etc.
„
1
TO-220F1
FEATURES
* RDS(ON)<0.6Ω @ VGS=-10V, ID=-4.1A
* High switching speed
* Dynamic dv/dt rating
„
SYMBOL
„
RDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF9520SL-TF1-T
UF9520SG-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing
Tube
UF9520SL-TF1-T
(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TF1: TO-220F1
(3)Lead Free
(3) L: Lead Free, G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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„
Preliminary
ABSOLUTE MAXIMUM RATING
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
VGS=-10V, TC=25°C
Continuous
Drain Current
VGS=-10V, TC=100°C
Pulsed (Note 2)
Avalanche Current (Note 2)
Single Pulse (Note 3)
Avalanche Energy
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
TC=25°C
Power Dissipation (PCB Mount) (Note 5) TA=25°C
Linear Derating Factor
Linear Derating Factor (PCB Mount) (Note 5)
Junction Temperature
Storage Temperature Range
„
POWER MOSFET
SYMBOL
VDSS
VGSS
ID
IDM
IAR
EAS
EAR
dv/dt
PD
TJ
TSTG
RATINGS
-100
±20
-6.8
-4.8
-27
-6.8
300
6.0
-5.5
60
3.7
0.40
0.025
-55~+175
-55~+175
UNIT
V
V
A
A
A
A
mJ
mJ
V/ns
W
W
W/°C
W/°C
°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
62
°C/W
θJA
Junction to Ambient (PCB Mount) (Note 5)
40
°C/W
Junction to Case
θJC
2.5
°C/W
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. VDD=-25V, starting TJ=25°C, L=9.7mH, RG=25Ω, IAS= -6.8A.
4. ISD≤-6.8A, di/dt≤110A/µs, VDD≤BVDSS, TJ≤175°C.
5. When mounted on 1” square PCB (FR-4 or G-10 Material)
„
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
ON CHARACTERISTICS
Static Drain-Source On-State Resistance
Gate Threshold Voltage
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
ID=-250µA, VGS=0V
IGSS
RDS(ON)
VGS(TH)
gFS
CISS
COSS
CRSS
TYP
VGS=-10V, ID=-4.1A (Note 2)
VDS=VGS, ID=-250µA
VDS=-50V, ID=-4.1A (Note 2)
VGS=0V, VDS=-25V, f=1.0MHz
MAX
UNIT
-100
V
-0.10
VDS=-100V, VGS=0V
VDS=-80V, VGS=0V, TJ=150°C
VGS=-20V, VDS=0V
VGS=+20V, VDS=0V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
IDSS
Forward
Reverse
TEST CONDITIONS
-2.0
2.0
390
170
45
V/°C
-100
-500
-100
+100
µA
µA
nA
nA
0.60
-4.0
Ω
V
S
pF
pF
pF
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„
Preliminary
POWER MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS
18
nC
Total Gate Charge
QG
ID=-6.8A, VDS=-80V, VGS=-10V,
Gate to Source Charge
QGS
3.0
nC
(Note 2)
Gate to Drain ("Miller") Charge
QGD
9.0
nC
Turn-ON Delay Time
tD(ON)
9.6
ns
Rise Time
tR
29
ns
VDD=-50V, ID=-6.8A, RG=18Ω
RD=7.1Ω (Note 2)
Turn-OFF Delay Time
tD(OFF)
21
ns
Fall Time
tF
25
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous
IS
-6.8
A
Source Current
Maximum Body Diode Pulsed Current
ISM
-27
A
(Note 1)
TJ=25°C, IS=-6.8A, VGS=0V
-6.3
V
Drain-Source Diode Forward Voltage
VSD
(Note 2)
98
200
ns
Body Diode Reverse Recovery Time
tRR
TJ=25°C, IF=-6.8A,
di/dt=100A/µs (Note 2)
Body Diode Reverse Recovery Charge
QRR
0.33 0.66
µC
Intrinsic turn-on time is negligible (turn-on is dominated by
Forward Turn-On Time
tON
LS+LD)
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width≤300µs; duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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„
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
-10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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Preliminary
POWER MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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