Datasheet

UNISONIC TECHNOLOGIES CO., LTD
11N80
Preliminary
Power MOSFET
11A, 800V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 11N80 is an N-Channel power MOSFET, it uses UTC’s
advanced technology to provide customers with a minimum on-state
resistance, low gate charge and high switching speed.
The UTC 11N80 is suitable for high speed switching applications
in power supplies, PWM motor controls, high efficient DC to DC
converters and bridge circuits.

FEATURES
* RDS(ON) <[email protected]=10V
* High switching speed

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
11N80L-TF1-T
11N80G-TF1-T
TO-220F1
11N80L-TF2-T
11N80G-TF2-T
TO-220F2
11N80L-T3P-T
11N80G-T3P-T
TO-3P
11N80L-TC3-T
11N80G-TC3-T
TO-230
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
11
A
Drain Current
Pulsed
IDM
11
A
Avalanche Current
IAR
44
A
960
mJ
Single Pulsed
EAS
Avalanche Energy
Repetitive
EAR
12
mJ
Peak Diode Recovery dv/dt
dv/dt
4.0
V/ns
TO-220F1/TO-220F2
50
Power Dissipation (TC=25°C)
TO-3P
PD
297
W
TO-230
156
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=15mH, IAS=11.7A, VDD=50V, RG=25Ω starting TC=25°C.

THERMAL DATA
PARAMETER
TO-3P
Junction to Ambient
TO-220F1/ TO-220F2
TO-230
TO-3P
TO-230
Junction to Case
TO-220F1
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
40
62.5
0.42
0.80
1.98
1.89
UNIT
°С/W
°С/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Breakdown Voltage Temperature
△BVDSS/△TJ Reference to 25°C, ID=250µA
Coefficient
Drain-Source Leakage Current
IDSS
VDS=800V, VGS=0V
Forward
VGS=+30V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω,
VGS=10V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Total Gate Charge
QG
VGS=10V, VDD=50V, ID=1.3A,
Gate to Source Charge
QGS
RG=25Ω
Gate to Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
IS
Current
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=11.0A, VGS=0V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
800
V
1.0
V/°C
10
µA
+100 nA
-100 nA
3
5
1.0
V
Ω
970 1170
200 280
23
30
pF
pF
pF
100
152
410
220
58
10.9
17
130
270
450
260
80
ns
ns
ns
ns
nC
nC
nC
11
A
44
1.4
A
V
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Preliminary
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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