Datasheet

UNISONIC TECHNOLOGIES CO., LTD
10N70Z
Power MOSFET
10A, 700V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 10N70Z is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have a
high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.

FEATURES
* RDS(ON) [email protected] =10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N70ZL-TF1-T
10N70ZG-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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QW-R502-935, A
10N70Z

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±20
V
Avalanche Current (Note 2)
IAR
10
A
Continuous
ID
10
A
Drain Current
Pulsed (Note 2)
IDM
40
A
Single Pulsed (Note 3)
EAS
250
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
50
W
PD
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATING
62.5
2.5
UNIT
°C/W
°C/W
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10N70Z

Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
700
V
Drain-Source Leakage Current
IDSS
VDS = 700V, VGS = 0V
10
µA
Forward
VGS = 20 V, VDS = 0 V
5
µA
Gate-Source Leakage Current
IGSS
Reverse
VGS = -20 V, VDS = 0 V
-5
µA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID = 250 µA, Referenced to 25°C
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 5A
0.9 1.2
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1570 2040 pF
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
COSS
166 215 pF
Reverse Transfer Capacitance
CRSS
18
24
pF
SWITCHING CHARACTERISTICS
23
55
ns
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
69 150 ns
VDS=350V, ID =10A, RG =25Ω
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
144 300 ns
tF
90 165 ns
44
57
nC
Total Gate Charge
QG
VDS=560V, ID=10A, VGS=10 V
Gate-Source Charge
QGS
6.7
nC
(Note 1, 2)
Gate-Drain Charge
QGD
18.5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS =10A
1.4
V
Maximum Continuous Drain-Source Diode
IS
10
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
40
A
Forward Current
Reverse Recovery Time
trr
420
ns
VGS = 0 V, IS = 10A,
dIF / dt = 100 A/µs (Note 1)
Reverse Recovery Charge
QRR
4.2
µC
Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
2. Essentially independent of operating temperature
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10N70Z

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-935,A
10N70Z

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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10N70Z
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)
Drain Current, ID (µA)
300
200
150
100
50
200
150
100
50
0
0
0
0
200
600
800 1000
400
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
7
1
2
3
Gate Threshold Voltage, VTH (V)
4
Drain Current vs. Source to Drain Voltage
14
12
Drain Current, ID (A)
6
Drain Current, ID (A)

Power MOSFET
5
4
3
2
VGS=10V, ID=5A
1
6
5
1
2
3
4
Drain to Source Voltage, VDS (V)
8
6
4
2
0
0
10
7
0
0
0.25
0.5
0.75
1
1.25
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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