Datasheet

UNISONIC TECHNOLOGIES CO., LTD
F2N60
Power MOSFET
2A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC F2N60 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) = [email protected] = 10V
* Ultra Low gate charge (typical 16nC)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
F2N60L-TN3-T
F2N60G-TN3-T
F2N60L-TN3-R
F2N60G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
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QW-R502-952.A
F2N60

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
2.0
A
2.0
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
8.0
A
100
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
4.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (TC = 25°С)
PD
44
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJc
RATINGS
100
2.87
UNIT
°С/W
°С/W
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F2N60

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
MIN TYP MAX UNIT
VGS = 0V, ID = 250μA
600
VDS = 600V, VGS = 0V
Forward
VGS = 30V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
0.4
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1A
4.7
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =25V, VGS =0V,
Output Capacitance
COSS
f =1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
35
Turn-On Rise Time
tR
50
VDD =300V, ID =2.4A,
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
85
Turn-Off Fall Time
tF
70
Total Gate Charge
QG
16
VDS=480V, VGS=10V,
Gate-Source Charge
QGS
3.8
ID=2.4A (Note 1, 2)
Gate-Drain Charge
QGD
4.6
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, ISD = 2.0 A
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
90 100
Reverse Recovery Time
trr
VGS = 0 V, ISD = 2.4A,
di/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
0.72
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
V
10
μA
100 nA
-100 nA
V/°С
40
5
V
Ω
350
50
7
pF
pF
pF
40
60
100
80
20
ns
ns
ns
ns
nC
nC
nC
1.4
2.0
8.0
130
V
A
A
ns
μC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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F2N60

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)

Power MOSFET
200
150
100
200
150
100
50
50
0
0
0
0.5 1 1.5 2 2.5 3 3.5
Gate Threshold Voltage, VTH (V)
4
Drain Current, ID (A)
Continuous Drain-Source Current, ISD (A)
0
200
400
600
800
1000
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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