Datasheet

UNISONIC TECHNOLOGIES CO., LTD
5N25Z
Power MOSFET
3.8A, 250V N-CHANNEL
MOSFET

DESCRIPTION
The UTC 5N25Z is an N-Channel enhancement MOSFET, it uses
UTC’s advanced technology to provide customers with a minimum
on-state resistance, high switching speed and low gate charge. It
can also withstand high energy pulse in the avalanche and
commutation modes.
The UTC 5N25Z is suitable for high efficiency switching DC/DC
converter, motor control and switch mode power supply.

FEATURES
* RDS(ON)<1.2Ω @ VGS=10V
* Low gate charge ( Typ=14nC)
* Low CRSS ( Typ=6.0pF)
* High switching speed
* ESD Capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N25ZL-TN3-T
5N25ZG-TN3-T
5N25ZL-TN3-R
5N25ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
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5N25Z

Power MOSFET
MARKING
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5N25Z

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
250
V
Gate-Source Voltage
VGSS
±20
V
Continuous
ID
3.8
A
Drain Current
Pulsed (Note 2)
IDM
9
A
Avalanche Current (Note 2)
IAR
3.8
A
60
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
3.7
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
5.5
V/ns
TA=25°C
2.5
W
PD
Power Dissipation TC=25°C
37
W
Derate above 25°C
0.29
W/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=6.2mH, IAS=3.8A, VDD=50V, RG=25Ω, Starting TJ=25°C.
4. ISD≤4.5A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25°C.

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
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RATINGS
110
3.4
UNIT
°C/W
°C/W
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Power MOSFE
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Breakdown
Voltage
Temperature
△BVDSS/△TJ Reference to 25°C, ID=250µA
Coefficient
Drain-Source Leakage Current
IDSS
VDS=250V, VGS=0V
Forward
VGS=+20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
V
Static Drain-Source On-State Resistance
GS=10V, ID=1.9A
RDS(ON)
(Note 1)
VGS=5V, ID=1.9A
Forward Transconductance
gFS
VDS=30V, ID=1.9A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=30V, ID=1.3A,
Gate to Source Charge
QGS
IG=100µA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω,
VGS=10V (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=3.8A, VGS=0V
Body Diode Reverse Recovery Time
tRR
IS=4.5A, VGS=0V, dIF/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width≤300µs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
250
V
0.18
2
V/°C
1
+10
-10
µA
µA
µA
4
0.78 1.2
0.92 1.25
3.35
V
Ω
Ω
S
250
40
6
325
50
8
pF
pF
pF
14
4
2.7
30
26
90
27
20
nC
nC
nC
ns
ns
ns
ns
35
40
110
40
3.8
9
1.5
95
0.3
A
A
V
ns
µC
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Power MOSFE
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFE
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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Power MOSFE
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
Drain Current, ID (µA)

Drain-Source On-State Resistance
Characteristics
3.5
7
3.0
6
2.5
5
VGS=10V, ID=1.9A
2.0
1.5
VGS=5V, ID=1.9A
4
3
1.0
2
0.5
1
0
0
2.5
0.5
1.0
1.5
2.0
Drain to Source Voltage, VDS (V)
Body-Diode Continuous Current vs.
Source to Drain Voltage
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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