Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT4N10
3.5A, 100V N-CHANNEL
TRENCHMOS LOGIC
LEVEL FET
Power MOSFET
1
TO-252

DESCRIPTION
The UTC UTT4N10 is an N-Channel Trench MOS Logic Level
FET, it uses UTC’s advanced technology to provide customers with
a minimum on-state resistance and low gate charge.
The UTC UTT4N10 is suitable for consumer, computing and
communications, etc.

1
SOT-223
FEATURES
* RDS(ON) < 250mΩ @ VGS=5V, ID=1.75A

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT4N10G-AA3-R
UTT4N10L-TN3-R
UTT4N10G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source

Package
SOT-223
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tape Reel
MARKING
SOT-223
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
TO-252
1 of 3
QW-R502-285.B
UTT4N10

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage TJ≥25°C, TJ≤150°C
VDSS
100
V
Drain-Gate Voltage
TJ≥25°C, TJ≤150°C, RGS=20kΩ
VDGR
100
V
Gate-Source Voltage
VGSS
±16
V
TC=100°C, VGS=5V
2.2
A
Continuous
ID
Drain Current
TC=25°C, VGS=5V
3.5
A
Pulsed
TC=25°C, tp≤10µs
IDM
14
A
Non-Repetitive
VGS=5V, VDD≤15V, RGS=50Ω,
IAS
3.5
A
Avalanche Current
Unclamped
Non-Repetitive
VGS=5V, VDD≤15V, RGS=50Ω,
EAR
45
mJ
Avalanche Energy
ID=3.5A, Unclamped, tp=0.2ms
SOT-223
6.9
W
Power Dissipation
PD
TO-252
W
Junction Temperature
TJ
-65~+150
°C
Storage Temperature Range
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
SOT-223
TO-252
Junction to Ambient

SYMBOL
θJA
RATINGS
150
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
OFF CHARACTERISTICS
SYMBOL
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
BVDSS
IGSS
VGS(TH)
RDS(ON)
TEST CONDITIONS
ID=250µA, VGS=0V, TJ=-55°C
ID=250µA, VGS=0V, TJ=25°C
VGS=+10V, VDS=0V, TJ=25°C
VGS=-10V, VDS=0V, TJ=25°C
89
100
VDS=VGS, ID=250μA, TJ=25°C
VGS=5V, ID=1.75A, TJ=25°C
VGS=5V, ID=1.75A, TJ=150°C
1
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDS=50V, VGS=10V, RL=0.5Ω,
RG(ext)=6Ω, TJ=25°C
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A,
Gate to Source Charge
QGS
TJ=25°C
Gate to Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
IS
TJ=25°C
Current
Maximum Body-Diode Pulsed Current
ISM
TJ=25°C, tp≤10µs
Drain-Source Diode Forward Voltage
VSD
IS=3.5A, VGS=0V, TJ=25°C
Body Diode Reverse Recovery Time
tRR
IS=3.5A, VGS=0V, dIS/dt=-100A/µs,
VDS=30V, TJ=25°C
Body Diode Reverse Recovery Charge
QRR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
130
10 100
-10 -100
V
V
nA
nA
3
250
575
V
mΩ
mΩ
200
30
30
140
30
20
3.7
3.6
0.87
50
100
ns
ns
ns
ns
nC
nC
nC
3.5
A
14
1.5
A
V
ns
nC
2 of 3
QW-R502-285.B
UTT4N10
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R502-285.B
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