Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT3N10
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET

DESCRIPTION
The UTC UT3N10 is an N-channel power MOSFET
providing very low on-resistance. It has high efficiency and
perfect cost-effectiveness. It can be generally applied in the
commercial and industrial fields.

FEATURES
* RDS(ON) < 0.165Ω @ VGS =10V, ID =3A
RDS(ON) < 0.180Ω @ VGS =4.5V, ID =2A
* Simple drive requirement

SYMBOL
Drain
Gate
Source

ORDERING INFORMATION
Ordering Number
UT3N10G-AB3-R
UT3N10G-AE3-R
Note: Pin Assignment: G: Gate D: Drain

Package
SOT-89
SOT-23
Pin Assignment
1
2
3
G
D
S
S
G
D
Packing
Tape Reel
Tape Reel
S: Source
MARKING
SOT-89
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Copyright © 2016 Unisonic Technologies Co., Ltd
SOT-23
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QW-R502-859.E
UT3N10

Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(VGS=4.5V, TA= 25°C) (Note 2)
Pulsed Drain Current (Note 3, 4)
SYMBOL
VDSS
VGSS
RATINGS
100
±20
UNIT
V
V
ID
3.0
A
IDM
10
A
0.55
W
Power Dissipation (TA= 25°C)
PD
0.35
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface mounted on 1 in2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
3. Pulse width limited by TJ(MAX)
4. Pulse width ≤300μs, duty cycle≤2%.
SOT-89
SOT-23

THERMAL DATA
PARAMETER
Junction to Ambient

SYMBOL
SOT-89
SOT-23
RATING
180
350
θJA
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
SYMBOL
TEST CONDITIONS
BVDSS
∆BVDSS
∆TJ
VGS =0V, ID =250µA
IDSS
IGSS
VDS =100V,VGS =0V
VGS =±20V
VGS(TH)
Drain to Source On-state Resistance
RDS(ON)
VDS =VGS, ID =250µA
VGS =10V, ID =3A
VGS =4.5V, ID =2A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS VDS=25V,VGS=0V,f =1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note)
QG
VGS =4.5V, VDS =48V, ID =3A
Gate Source Charge
QGS
Gate Drain Charge
QGD
Turn-ON Delay Time (Note)
tD(ON)
VGS=10V, VDS=30V, ID=1A,
Turn-ON Rise Time
tR
Turn-OFF Delay Time
tD(OFF) RD =30Ω, RG =3.3Ω
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
VSD
IS =1.2A, VGS =0V
Reverse Recovery Time
trr
IS=3A,VGS=0V, dI/dt=100A/µs
Reverse Recovery Charge
Qrr
Note: Pulse width ≤300μs, duty cycle≤2%.
www.unisonic.com.tw
TYP MAX UNIT
100
Reference to 25°C, ID=1mA
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
UNISONIC TECHNOLOGIES CO., LTD
MIN
V
0.05
1.0
490
41
33
V/°C
10
±100
µA
nA
3.0
0.165
0.180
V
Ω
Ω
780
pF
pF
pF
18
3.76
8.5
22
18
190
65
nC
nC
nC
ns
ns
ns
ns
1.2
25
26
V
ns
nC
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QW-R502-859.E
UT3N10

Power MOSFET
TEST WAVEFORMS
VG
QG
4.5V
QGS
QGD
Charge
Switching Time Waveform
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Q
Gate Charge Waveform
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QW-R502-859.E
Drain Current, ID (A)
Drain-Source Diode Forward Current, ISD (A)
Drain Current, ID (A)
Drain Current, ID (µA)
Drain Current, ID (µA)

Drain to Source On-state Resistance
, RDS(ON) (mΩ)
UT3N10
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
TYPICAL CHARACTERISTICS
QW-R502-859.E
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UT3N10
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-859.E
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