Datasheet

UNISONIC TECHNOLOGIES CO., LTD
100N02
Power MOSFET
100A, 15V N-CHANNEL
POWER TRENCH MOSFET

DESCRIPTION
The UTC 100N02 is an N-channel
it uses UTC’s advanced technology to
minimum on-state resistance, low
switching speed.
The UTC 100N02 is generally
Rectification or DC to DC convertor.

Power Trench MOSFET,
provide customers with a
gate charge and high
applied in synchronous
FEATURES
* RDS(ON)<12mΩ@ VGS=4.5V, ID =55A
RDS(ON)<17mΩ@ VGS=3.5V, ID =30A
* Low Gate Charge (Typical 46nC)
* High Switching Speed
* High Power and Current Handling Capability

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
100N02L-TM3-T
100N02G-TM3-T
100N02L-TN3-R
100N02G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source

Package
TO-251
TO-252
1
G
G
Pin Assignment
2
3
D
S
D
S
Packing
Tube
Tape Reel
MARKING
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QW-R502-860.B
100N02

Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
RATINGS
UNIT
VDSS
15
V
VGSS
±8
V
Continuous
ID
100
A
Drain Current
Pulsed
IDM
400
A
Avalanche Energy
Single Pulsed
EAS
12
mJ
Power Dissipation
PD
54
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
θJA
θJC
RATINGS
62.5
2.3
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
SYMBOL
Static Drain-Source On-State Resistance
RDS(ON)
BVDSS
IDSS
IGSS
VGS(TH)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=15V
VGS=+8V
VGS=-8V
15
ID=250µA
VGS=4.5V, ID=55A
VGS=3.5V, ID=30A
0.5
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=20V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDD=12V, ID=0.3A,
Gate to Source Charge
QGS
IG=100µA
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=10V, ID=0.16A, RG=25Ω,
Rise Time
tR
V
Turn-OFF Delay Time
tD(OFF)
GS=0~10V
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=55A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
1
±100
±100
V
μA
nA
nA
1.2
12
17
V
mΩ
mΩ
3565
1310
395
46
6.9
9.8
9
106
53
41
pF
pF
pF
60
nC
nC
nC
ns
ns
ns
ns
1.3
V
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100N02

TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)
Drain Current, ID (µA)
Power MOSFET
200
150
100
200
150
100
50
0
50
0
4
8
12
16
0
0
20
0.2
0.4
0.6
0.8
1.0
1.2
Gate Threshold Voltage, VTH (V)
Body-Diode Continuous Current, IS (A)
Body-Diode Continuous Current, IS (A)
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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