KSMU4N60 600V N-channel MOSFET KERSMI ELECTRONIC CO.,LTD. Description This N-channel MOSFET s use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) 2) 3) 4) BVDSS RDSON ID 600V 2.4Ω 4A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-251 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 4 Continuous Drain Current-T=100℃ 1.8 Pulsed Drain Current2 11.2 EAS Single Pulse Avalanche Energy3 210 PD Power Dissipation4 49 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMU4N60 KERSMI ELECTRONIC CO.,LTD. Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 2.56 RƟJA Thermal Resistance, Junction to Ambient1 110 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSMU4N60 KSMU4N60 TO-251 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 600 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA 2.0 — 4.0 V VDS=10V,ID=6A — 2.0 2.4 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A — 4.7 — — 515 670 — 55 72 — 6.5 8.5 — 10 30 — 42 90 — 38 85 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 46 10 Qg Total Gate Charge — 15 19 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — 2.5 — Qgd Gate-Drain “Miller” Charge ID=6A — 6.6 — ns ns ns ns nC nC nC — — 1.4 V — 300 — ns — 2.2 — nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMU4N60 KERSMI ELECTRONIC CO.,LTD. Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Figure 1. On-Region Characteristics Figure 3. Capacitance Characteristics unless otherwise noted Figure 2. Transfer Characteristics Figure 4. On-Resistance Variation vs. Drain Current and Gate Voltage www.kersemi.com 3 KSMU4N60 KERSMI ELECTRONIC CO.,LTD. Figure 5. Gate Charge Characteristics Figure 7.Breakdown Voltage Variation vs. Temperature Figure 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 8.Maximum Safe Operating Area Figure 9. Transient Thermal Response Curve www.kersemi.com 4