LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only FOUR DIGIT LED DISPLAY(0.39Inch) LFD415/62-XX/SRP95 DATA SHEET DOC. NO : QW0905- LFD415/62-XX/SRP95 REV. : A DATE : 22- Nov. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD415/62-XX/SRP95 Page 1/7 Package Dimensions 40.18(1.582") 10.0 (0.39") DIG.1 DIG.2 L1 DIG.3 L3 7.0(0.276") DIG.4 12.8 (0.504") L2 10.16 (0.4") DP ψ1.2(0.047") A F G E B C D DP LFD415/62-XX/SRP95 LIGITEK 4.5 3.5 9.5±0.5 ψ 0.45 TYP 2.54X7=17.78 (0.7") PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD415/62-XX/SRP95 Page 2/7 Internal Circuit Diagram LFD4162-XX/SRP95 LFD4152-XX/SRP95 14 16 13 3 5 11 15 7 A B DIG. C D 1 E F G DP A B DIG. C D 2 E F G DP L1 L2 A B DIG. C D 6 E F G DP L3 L2 A B DIG. C D 6 E F G DP 3 9 4 1 2 4 12 10 A B DIG. C D 8 E F G DP A B DIG. C D 1 E F G DP A B DIG. C D 2 E F G DP L1 2 4 12 9 1 14 16 13 3 5 11 15 7 L3 3 10 A B DIG. C D 8 E F G DP 4 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD415/62-XX/SRP95 Page 3/7 Electrical Connection PIN NO. LFD4152-XX/SRP95 PIN NO. LFD4162-XX/SRP95 1. Common Cathode Dig. 1 1. Common Anode Dig. 1 2. Common Cathode Dig. 2 2. Common Anode Dig. 2 3. Anode D 3. Cathode D 4. Cathode L1,L2 4. Anode L1,L2 5. Anode E 5. Cathode E 6. Common Cathode Dig. 3 6. Common Anode Dig.3 7. Anode DP 7. Cathode DP 8. Common Cathode Dig. 4 8. Common Anode Dig.4 9. Anode L3 9. Cathode L3 10. Cathode L3 10. Anode L3 11. Anode F 11. Cathode F 12. Anode L1,L2 12. Cathode L1,L2 13. Anode C 13. Cathode C 14. Anode A 14. Cathode A 15. Anode G 15. Cathode G 16. Anode B 16. Cathode B LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO. LFD415/62-XX/SRP95 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT G Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 120 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode or anode Material Emitted CHIP PART NO λP (nm) △λ Vf(v) (nm) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. Common Cathode LFD4152-XX/SRP95 GaP LFD4162-XX/SRP95 Electrical 565 Green 30 1.7 2.1 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.6 1.75 3.05 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO. LFD415/62-XX/SRP95 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λp nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD415/62-XX/SRP95 Page 6/7 Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 1.0 5.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD415/62-XX/SRP95 Page 7/7 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11