ES1A THRU ES1J

SURFACE MOUNT SUPER FAST RECTIFIER
ES1A THRU ES1J
VOLTAGE RANGE
50 to 600 Volts
CURRENT
1.0 Ampere
FEATURES
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DO-214AC(SMA)
Plastic package has underwrites laboratory flammability
Classification 94V-0
Glass passivated chip junction
Built-in strain relief
Super Fast switiching speed for high efficiency
High temperature soldering guaranteed
250℃/10 seconds
MECHANICAL DATA
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Case: Transfer molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.002ounce, 0.064 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
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Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
SYMBOLS ES1A ES1B
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
Maximum RMS Voltage
VRMS
35
70
Maximum DC Blocking Voltage
VDC
50
100
Maximum Average Forward Rectified Current
At TA=55℃(NOTE 1)
Peak Forward Surge Current
8.3ms single half sine wave superimposed on
rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
at rated DC blocking voltage at
TA = 25℃
TA = 125℃
ES1G
400
280
400
ES1J
600
420
600
UNIT
Volts
Volts
Volts
Amps
IFSM
30
Amps
VF
0.95
1.25
5.0
100
IR
Typical Junction Capacitance
(Measured at 1.0MHz and applied reverse voltage of 4.0V)
CJ
Storage Temperature Range
ES1E
300
210
300
1.0
trr
Operating Junction Temperature
ES1D
200
140
200
I(AV)
Maximuml Reverse Recovery Time
Test conditions IF =0.5A, IR =1.0A, IRR =0.25A
Typical Thermal Resistance (NOTE 1)
ES1C
150
105
150
1.7
µA
35
10
RθJA
RθJL
TJ
TSTG
Notes:
1. Thermal resistance from Junction to ambient and from junction to lead mounted on
PCB. with 0.2×0.2″(5.0 × 5.0mm) copper pad areas.
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nS
8
88
28
(-55 to +150)
(-55 to +150)
Volts
pF
℃/W
℃
℃
SURFACE MOUNT SUPER FAST RECTIFIER
ES1A THRU ES1J
VOLTAGE RANGE
50 to 600Volts
CURRENT
1.0 Ampere
FIG.1-TYPICAL FORWARD CURRENT
FIG.2-MAXIMUM NON-REPETITIVE PEAK
DERATING CURVE
FORWARD SURGE CURRENT
PEAK FORWARD SURGE
1.2
0.8
0.6
0.4
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375″(9.5mm) Lead Length
0.2
30
CURRENT, (A)
1.0
(A)
AVERAGE FORWARD CURRENT,
RATING AND CHRACTERISTIC CURVES ES1A THRU ES1J
8.3ms Single Half Sine-W ave
(JEDEC M ethod) Tj = Tjmax
20
10
1 Cycle
0
0
25
100
75
50 55
175
150
125
0
1
2
AMBIENT TEMPERATURE, (° C)
4
6
8
10
40
20
60
100
NUMBER OF CYCLES AT 60 Hz
FIG.3-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
TJ = 25° C
1.0
Pulse Width=300us
1% Duty Cycle
0.1
100
10
(μA)
INSTANTANEOUS REVERSE CURRENT,
10
(A)
INSTANTANEOUS FORWARD CURRENT,
100
TJ =125° C
1.0
TJ =25℃
0.1
0
40
20
60
80
100
120
140
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
INSTANTANEOUS FORWARD VOLTAGE,(V)
FIG.5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
1000
ES1A-ES1D
ES1F-ES1J
F1G.6-TEST CIRCUIT DIAGRAM AND
REVERSE RECOVERY TIME CHARACTERISTIC
Trr
50Ω
10Ω
NONINDUCTIVE NONINDUCTIVE
+0.5A
(-)
100
(+)
25 Vdc
(approx.)
(-)
TJ =25° C
f= 1MHz
Vsig=50mVp-p
1.0
1Ω
NON
INDUCTIVE
PULSE
GENERATIOR
(NOTE 2)
0
-0.25A
(+)
OSCILLOSCOPE
(NOTE 1)
-1.0A
10
0.1
D.U.T.
10
REVERSE VOLTAGE,(V)
100
NOTES : 1.Rise Time=7ns max. Input Impedance=
1 magohm. 22pF
2.Rise time=10ns max. Source Impedance=
50 ohms
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1cm
SET TIME BASE FOR
50/100ns/cm
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