Datasheet

UNISONIC TECHNOLOGIES CO., LTD
4N60-Q
Power MOSFET
4A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 4N60-Q is a high voltage power MOSFET
and is designed to have better characteristics, such as
fast switching time, low gate charge, low on-state
resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC
converters and bridge circuits.

FEATURES
* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high RuggednessA

SYMBOL
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-972.C
4N60-Q

Power MOSFET
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
4N60L-TA3-T
4N60G-TA3-T
TO-220
4N60L-TF1-T
4N60G-TF1-T
TO-220F1
4N60L-TF2-T
4N60G-TF2-T
TO-220F2
4N60L-TF3-T
4N60G-TF3-T
TO-220F
4N60L-TF3T-T
4N60G-TF3T-T
TO-220F3
4N60L-TM3-T
4N60G-TM3-T
TO-251
4N60L-TMS-T
4N60G-TMS-T
TO-251S
4N60L-TMS2-T
4N60G-TMS2-T
TO-251S2
4N60L-TMS4-T
4N60G-TMS4-T
TO-251S4
4N60L-TN3-R
4N60G-TN3-R
TO-252
4N60L-TND-R
4N60G-TND-R
TO-252D
4N60L-T2Q-T
4N60G-T2Q-T
TO-262
4N60L-TQ2-R
4N60G-TQ2-R
TO-263
4N60L-TQ2-T
4N60G-TQ2-T
TO-263
4N60G-K08-5060-R
DFN-8(5×6)
Note: Pin Assignment: G: Gate D: Drain S: Source

1
G
G
G
G
G
G
G
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
D
D
D
D
D
D
D
S
Pin Assignment
3
4
5
6
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S G D D
7
D
8
D
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
Tape Reel
Tube
Tape Reel
MARKING
PACKAGE
TO-220
TO-251S2
TO-220F
TO-251S4
TO-220F1
TO-252
TO-220F2
TO-252D
TO-220F3
TO-262
TO-251
TO-263
TO-251S
MARKING
DFN-8(5×6)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-972.C
4N60-Q

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
4.4
A
4.0
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
16
A
60
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
10.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
106
TO-220F/TO-220F1
36
TO-220F3
TO-220F2
38
Power Dissipation
PD
W
TO-251/TO-252/TO-252D
TO-251S/TO-251S2
50
TO-251S4
DFN-8(5×6)
30
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/TO-252/TO-252D
TO-251S/TO-251S2
TO-251S4
DFN-8(5×6)
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/TO-252/TO-252D
TO-251S/TO-251S2
TO-251S4
DFN-8(5×6)
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
UNIT
62.5
θJA
°С/W
110
75
1.18
3.47
θJC
3.28
°С/W
2.5
4.17
3 of 7
QW-R502-972.C
4N60-Q

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250μA
600
VDS = 600V, VGS = 0V
Forward
VGS = 30V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
Output Capacitance
COSS
f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD = 30V, ID = 0.5A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS= 50V,ID= 1.3A, IG = 100μA
Gate-Source Charge
QGS
VGS= 10V (Note 1, 2)
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 4.4A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0 V, IS = 4.4A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0.6
V
10
μA
100 nA
-100 nA
V/°С
2.2
4.0
2.5
V
Ω
520
52
11
600
70
15
pF
pF
pF
60
80
70
120
70
ns
ns
ns
ns
nC
nC
nC
1.4
V
4.4
A
17.6
A
96
50
20
6
4
250
1.5
ns
μC
4 of 7
QW-R502-972.C
4N60-Q

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R502-972.C
4N60-Q

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
6 of 7
QW-R502-972.C
4N60-Q
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 7
QW-R502-972.C