UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 5.0Ω @ VGS = 10V, ID =1A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-974.C 2N60-E Power MOSFET ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N60G-AA3-T SOT-223 2N60L-TA3-T 2N60G-TA3-T TO-220 2N60L-TF1-T 2N60G-TF1-T TO-220F1 2N60L-TF3-T 2N60G-TF3-T TO-220F 2N60L-TM3-T 2N60G-TM3-T TO-251 2N60L-TMA-T 2N60G-TMA-T TO-251L 2N60L-TMS-T 2N60G-TMS-T TO-251S 2N60L-TMS2-T 2N60G-TMS2-T TO-251S2 2N60L-TMS4-T 2N60G-TMS4-T TO-251S4 2N60L-TN3-R 2N60G-TN3-R TO-252 2N60L-T2Q-T 2N60G-T2Q-T TO-262 2N60L-T60-K 2N60G-T60-K TO-126 2N60L-T6C-K 2N60G-T6C-K TO-126C 2N60G-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source 1 G G G G G G G G G G G G G S 2 D D D D D D D D D D D D D S Pin Assignment 3 4 5 6 7 S S S S S S S S S S S S S S G D D D 8 D Packing Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tube Bulk Bulk Tape Reel MARKING PACKAGE MARKING SOT-223 TO-220 TO-220F TO-220F1 TO-251 TO-251L TO-251S TO-251S2 TO-251S4 TO-252 TO-262 TO-126 TO-126C DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-974.C 2N60-E Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A Continuous ID 2.0 A Drain Current Pulsed (Note 2) IDM 8.0 A Avalanche Energy Single Pulsed (Note 3) EAS 100 mJ SOT-223 1 W TO-220/ TO-262 54 W TO-220F/TO-220F1 23 W Power Dissipation TO-251/TO-251L PD (TC = 25°С) TO-252/TO-251S 44 W TO-251S2/TO-251S4 TO-126/TO-126C 40 W DFN-8(5×6) 22 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=50mH, IAS=2A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER PACKAGE SYMBOL RATINGS SOT-223 150 TO-220/ TO-262 62.5 TO-220F/TO-220F1 TO-251/TO-251L Junction to Ambient θJA TO-252/TO-251S 100 TO-251S2/TO-251S4 TO-126/TO-126C 89 DFN-8(5×6) 75 (Note) SOT-223 14 TO-220/ TO-262 2.32 TO-220F/TO-220F1 5.5 TO-251/TO-251L Junction to Case θJC TO-252/TO-251S 2.87 TO-251S2/TO-251S4 TO-126/TO-126C 3.12 DFN-8(5×6) 5.6 (Note) 2 Note: Note: The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT °С/W °С/W °С/W °С/W °С/W °С/W °С/W °С/W °С/W °С/W °С/W 3 of 7 QW-R502-974.C 2N60-E Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0V, ID = 250μA 600 V VDS = 600V, VGS = 0V 10 μA 100 nA Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.4 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A 4.36 5.0 Ω DYNAMIC CHARACTERISTICS 260 300 pF Input Capacitance CISS VDS =25V, VGS =0V, Output Capacitance COSS 35 40 pF f =1MHz Reverse Transfer Capacitance CRSS 9 13 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) 40 60 ns Turn-On Rise Time tR 35 55 ns VDD =30V, ID =1A, RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 70 90 ns Turn-Off Fall Time tF 40 55 ns Total Gate Charge QG 35 50 nC VDS=100V, VGS=10V, Gate-Source Charge QGS 3.5 nC ID=2.4A (Note 1, 2) Gate-Drain Charge QGD 8 nC DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4 V Continuous Drain-Source Current ISD 2.0 A Pulsed Drain-Source Current ISM 8.0 A Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-974.C 2N60-E Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-974.C 2N60-E Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-974.C 2N60-E TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) Power MOSFET 200 150 100 200 150 100 50 50 0 0 0 0.5 1 1.5 2 2.5 3 3.5 Gate Threshold Voltage, VTH (V) 4 Drain Current, ID (A) Continuous Drain-Source Current, ISD (A) 0 200 600 800 1000 400 Drain-Source Breakdown Voltage, BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-974.C