Final data sheet V23990-P709-F-01-14 flow 90PACK1 P709-F 1200V/25A Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Supplier Unit Condition Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom Repetitive peak collector current Periodischer Kollektorspitzenstrom Power dissipation per IGBT Verlustleistung pro IGBT Gate-emitter peak voltage Gate-Emitter-Spitzenspannung SC withstand time* Kurzschlußverhalten* max. Chip temperature max. Chiptemperatur Tj=Tjmax Th=80°C, Tc=80°C tp limited by Tj max Tj=Tjmax Th=80°C Tc=80°C VCE 1200 V IC 26 33,7 75 A 52,5 80 ±20 W 10 900 150 us V °C 20 27,2 50 A W Tjmax 32 48 150 °C Tstg -40…+125 °C Top -40….+125 °C Vis 4000 Vdc min 12,7 mm min 12,7 mm Icpuls Ptot VGE Tj≤150°C VGE=15V VCC tSC Tjmax A V Diode Inverter Diode Wechselrichter DC forward current Dauergleichstrom Repetitive peak forward current Periodischer Spitzenstrom Power dissipation per Diode Verlustleistung pro Diode max. Chip temperature max. Chiptemperatur Tj=Tjmax Th=80°C, Tc=80°C tp limited by Tj max Tj=Tjmax Th=80°C Tc=80°C IF IFRM Ptot A Thermal properties Thermische Eigenschaften Storage temperature Lagertemperatur Operation temperature Betriebstemperatur Insulation properties Modulisolation Insulation voltage Isolationsspannung Creepage distance Kriechstrecke Clearance Luftstrecke t=1min Additional notes and remarks: * Allowed number of short circuits must be less than 1000 times, and time duration between short circuits should be more than 1 second! Copyright by Vincotech 1 Revision: 2 Final data sheet flow 90PACK1 V23990-P709-F-01-14 P709-F 1200V/25A Characteristic values/ Charateristische Werte Description Symbol Conditions T(C°) Transistor Inverter Transistor Wechselrichter Gate emitter threshold voltage Gate-Schwellenspannung Collector-emitter saturation voltage Kollektor-Emitter Sättigungsspannung Collector-emitter cut-off Kollektor-Emitter Reststrom Gate-emitter leakage current Gate-Emitter Reststrom Integrated Gate resistor Integrirter Gate Widerstand Turn-on delay time Einschaltverzögerungszeit Rise time Anstiegszeit Turn-off delay time Abschaltverzögerungszeit Fall time Fallzeit Turn-on energy loss per pulse Einschaltverlustenergie pro Puls Turn-off energy loss per pulse Abschaltverlustenergie pro Puls Input capacitance Eingangskapazität Output capacitance Ausgangskapazität Reverse transfer capacitance Rückwirkungskapazität Gate charge Gate Ladung Thermal resistance chip to heatsink per chip Wärmewiderstand Chip-Kühlkörper pro Chip Thermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip Datasheet values Other conditions (Rgon-Rgoff) VGE(V) VGS(V) VCE(V) VDS(V) IC(A) IF(A) Id(A) VGE(th) Tj=25°C VCE=VGE Tj=125°C VCE(sat) Tj=25°C Tj=125°C ICES Tj=25°C Tj=125°C IGES Tj=25°C Tj=150°C Rgint td(on) tr td(off) tf Eon Eoff Cies Coss Crss QGate Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 1m 15 25 Copyright by Vincotech Max RthJC 5,8 6,5 V 1,68 1,9 2,2 V mA 0 1200 0,25 0 650 8 Rgoff=32 Ω Rgon=32 Ω Rgoff=32 Ω Rgon=32 Ω Rgoff=32 Ω Rgon=32 Ω Rgoff=32 Ω Rgon=32 Ω Rgoff=32 Ω Rgon=32 Ω Rgoff=32 Ω Rgon=32 Ω f=1MHz nA Ohm ns ±15 600 25 250 ±15 600 25 26 ±15 600 25 460 ±15 600 25 194 ns ns ns mWs ±15 600 25 2,81 ±15 0 600 25 25 2,89 1,81 nF f=1MHz 0 25 0,095 nF f=1MHz 0 25 0,082 nF mWs ±15 25 Thermal grease thickness≤50um Warmeleitpaste Dicke≤50um λ = 0,61 W/mK RthJH 5 20 240 nC 1,33 K/W K/W SIDC10D120H6 Diode Wechselrichter Thermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip Typ SIGC32T120R3L Diode Inverter Diode forward voltage Durchlaßspannung Peak reverse recovery current Rückstromspitze Reverse recovery time Sperreverzögerungszeit Reverse recovered charge Sperrverzögerungsladung Reverse recovered energy Sperrverzögerungsenergie Thermal resistance chip to heatsink per chip Wärmewiderstand Chip-Kühlkörper pro Chip Min Unit VF IRM trr Qrr Erec RthJH RthJC Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Rgoff=32 Ω Rgon=32 Ω Rgoff=32 Ω Rgon=32 Ω Rgoff=32 Ω Rgon=32 Ω Rgoff=32 Ω Rgon=32 Ω Thermal grease thickness≤50um Warmeleitpaste Dicke≤50um λ = 0,61 W/mK 2 25 1,7 1,68 25 37,1 2,3 V A ±15 600 ns ±15 600 25 422 ±15 600 25 4,9 uC mWs ±15 600 25 1,88 2,22 K/W K/W Revision: 2 Final data sheet flow 90PACK1 1200V/25A V23990-P709-F-01-14 Output inverter Figure 1. Typical output characteristics Figure 2. Output inverter IGBT Typical output characteristics Output inverter IGBT Ic= f(VCE) Ic= f(VCE) 70 IC (A) IC (A) 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 0 1 2 3 4 VCE (V) 5 0 1 2 3 4 VCE (V) parameter: tp = 250 us Tj = 25 °C VGE parameter: from: 7 V to 17 V in 1 V steps parameter: tp = 250 us Tj = 125 °C VGE parameter: from: 7 V to 17 V in 1 V steps Figure 3. Typical transfer characteristics Figure 4. Output inverter IGBT Ic= f(VGE) 30 5 Typical diode forward current as a function of forward voltage IF=f(VF) Output inverter FRED IC (A) IF (A) 70 25 oC 60 25 125 oC 50 20 40 15 30 10 125 oC 20 25 oC 5 10 0 0 0 2 4 6 8 10 V GE (V) 12 parameter: tp = 250 us VCE = Copyright by Vincotech 0 10 V 0,5 1 1,5 2 2,5 VF (V) 3 parameter: tp = 250 us 3 Revision: 2 Final data sheet flow 90PACK1 1200V/25A V23990-P709-F-01-14 Output inverter Figure 5. Typical switching energy losses Figure 6. as a function of collector current Output inverter IGBT E = f (RG) E = f (Ic) 6 E (mWs) 6 E (mWs) Typical switching energy losses as a function of gate resistor Output inverter IGBT Eon 5 5 Eoff Eon 4 4 3 3 Eoff Erec 2 2 Erec 1 1 0 0 0 10 20 30 40 I C (A) 50 0 15 30 inductive load, Tj = 125 °C VCE = 600 V VGE= ±15 V Rgon= 32 Ω Rgoff= 32 Ω inductive load, Tj = 125 °C VCE = 600 V VGE= ±15 V Ic = 25 A Figure 7. Typical switching times as a Figure 8. 45 60 RG(Ω) function of collector current Output inverter IGBT Typical switching times as a function of gate resistor Output inverter IGBT t = f (Ic) t = f (RG) 75 1 tdoff t ( μs) t ( μs) 1 tdoff tdon tdon tf tf 0,1 0,1 tr tr 0,01 0,01 0,001 0,001 0 10 20 30 40 IC (A) 50 0 inductive load, Tj = 125 °C VCE = 600 V VGE= ±15 V Rgon= 32 Ω Rgoff= 32 Ω Copyright by Vincotech 15 30 45 60 RG (Ω ) 75 inductive load, Tj = 125 °C VCE = 600 V VGE= ±15 V Ic = 25 A 4 Revision: 2 Final data sheet flow 90PACK1 1200V/25A V23990-P709-F-01-14 Output inverter Figure 9. Typical reverse recovery time as a Figure 10. Typical reverse recovery current as a function of IGBT turn on gate resistor Output inverter FRED diode function of IGBT turn on gate resistor Output inverter FRED diode trr = f (Rgon) IRRM = f (Rgon) 80 IrrM (A) t rr( μs) 0,6 0,5 60 0,4 40 0,3 0,2 20 0,1 0 0 0 15 Tj = VR = I F= VGE= 30 125 600 25 ±15 45 60 R Gon ( Ω ) 75 0 15 °C V A V 30 Tj = VR = I F= VGE= Figure 11. Typical reverse recovery charge as a 60 R Gon ( Ω ) 75 °C V A V Figure 12. Typical rate of fall of forward function of IGBT turn on gate resistor Output inverter FRED diode and reverse recovery current as a function of IGBT turn on gate resistor Output inverter FRED diode dI0/dt,dIrec/dt= f (Rgon) Qrr = f (Rgon) 6 4000 direc / dt (A/ μs) Qrr ( μC) 125 600 25 ±15 45 5 3500 dIrec/dt 3000 4 2500 2000 3 1500 2 1000 dI0/dt 1 500 0 0 0 15 Tj = VR = I F= VGE= 30 125 600 25 ±15 45 60 R Gon ( Ω) 75 0 °C V A V Copyright by Vincotech 15 Tj = VR = I F= VGE= 5 30 125 600 25 ±15 45 60 R Gon ( Ω) 75 °C V A V Revision: 2 Final data sheet flow 90PACK1 1200V/25A V23990-P709-F-01-14 Output inverter Figure 13. IGBT transient thermal impedance Figure 14. FRED transient thermal impedance as a function of pulse width as a function of pulse width ZthJH = f(tp) ZthJH = f(tp) 101 ZthJH (K/W) ZthJH (K/W) 101 100 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -1 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 10-2 10-2 10-5 10-4 10-3 10-2 Parameter: D = tp / T 10-1 100 t p (s) -5 101 10 RthJH= 1,33 K/W -4 10 10 -3 10 -2 Parameter: D = tp / T IGBT thermal model values FRED thermal model values R (C/W) R (C/W) 0,09 0,31 0,64 0,19 0,05 0,05 Tau (s) 3,7E+00 5,7E-01 1,4E-01 1,7E-02 1,9E-03 2,6E-04 Copyright by Vincotech 0,05 0,24 0,94 0,59 0,26 0,15 6 10 -1 10 0 t p (s) 10 1 RthJH= 2,22 K/W Tau (s) 9,9E+00 1,1E+00 1,8E-01 4,6E-02 8,5E-03 7,4E-04 Revision: 2 Final data sheet flow 90PACK1 1200V/25A V23990-P709-F-01-14 Output inverter Figure 15. Power dissipation as a Figure 16. Collector current as a function of heatsink temperature Output inverter IGBT function of heatsink temperature Output inverter IGBT Ptot = f (Th) Ic = f (Th) 40 IC (A) Ptot (W) 125 100 30 75 20 50 10 25 0 0 0 50 100 150 Th ( o C) 0 200 50 100 150 parameter: Tj= 150 ºC parameter: Tj= 150 ºC VGE= 15 V Figure 17. Power dissipation as a Figure 18. Forward current as a Th ( o C) 200 function of heatsink temperature Output inverter FRED function of heatsink temperature Output inverter FRED Ptot = f (Th) IF = f (Th) 75 IF (A) Ptot (W) 40 60 30 45 20 30 10 15 0 0 0 50 100 150 Th ( o C) 200 0 parameter: Tj= 150 ºC Copyright by Vincotech 50 100 150 Th ( o C) 200 parameter: Tj= 150 ºC 7 Revision: 2 Final data sheet flow 90PACK1 1200V/25A V23990-P709-F-01-14 Thermistor Figure 19. Typical NTC characteristic as afunction of temperature RT = f (T) NTC-typical temperature characteristic R/Ω 25000 20000 15000 10000 5000 0 25 50 Copyright by Vincotech 75 100 T (°C) 125 8 Revision: 2 Final data sheet flow 90PACK1 1200V/25A V23990-P709-F-01-14 Switching definitions General conditions: Figure 1. Tj= 125 °C 32 Ω Rgon= Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff) Output inverter IGBT Figure 2. Rgoff= 32 Ω Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon) Output inverter IGBT 280 140 120 100 200 Uce 90% Uge 90% 80 Ic 240 tdoff 160 60 Ic % 120 % 40 Uce tEoff 80 20 Uce Uge Uge tdon 40 0 Ic 1% Uge10% -20 Uce3% Ic10% 0 tEon -40 -0,3 -0,1 0,1 Uge(0%)= Uge(100%)= Uc(100%)= Ic(100%)= tdoff= tEoff= Figure 3. -15 15 600 25 0,46 0,77 0,3 0,5 time (us) 0,7 0,9 -40 1,1 2,5 V V V A us us 2,65 2,8 Uge(0%)= Uge(100%)= Uc(100%)= Ic(100%)= tdon= tEon= Turn-off Switching Waveforms & definition of tf Output inverter IGBT Figure 4. 140 2,95 3,1 time(us) -15 15 600 25 0,25 0,61 3,25 3,4 3,55 V V V A us us Turn-on Switching Waveforms & definition of tr Output inverter IGBT 260 120 fitted 100 Ic Ic 220 Uce 180 Ic 90% 80 140 % Ic 60% % 60 Uce 100 40 Ic90% Ic 40% tr 60 20 Ic10% 0 20 Ic10% tf -20 2,85 -20 0,2 0,3 0,4 0,5 time (us) 0,6 0,7 0,8 Uc(100%)= 600 V Ic(100%)= 25 A tf= 0,194 us Copyright by Vincotech 2,9 2,95 3 3,05 time(us) 3,1 3,15 3,2 3,25 Uc(100%)= 600 V Ic(100%)= 25 A tr= 0,026 us 9 Revision: 2 Final data sheet flow 90PACK1 1200V/25A V23990-P709-F-01-14 Switching definitions Figure 5. Turn-off Switching Waveforms & definition of tEoff Output inverter IGBT Figure 6. 120 Turn-on Switching Waveforms & definition of tEon Output inverter IGBT 220 Eoff 100 Pon Poff 180 80 140 60 Eon 100 % % 40 60 20 Uge10% 20 0 Uge90% -20 -0,4 -0,2 tEoff 0 0,2 0,4 time (us) tEon Ic 1% 0,6 0,8 Uce3% -20 1 2,5 1,2 2,65 2,8 Poff(100%)= 14,92 kW Eoff(100%)= 2,90 mJ tEoff= 0,77 us Pon(100%)= Eon(100%)= tEon= Figure 7. Gate voltage vs Gate charge Figure 8. 120 15 80 10 40 5 0 0 % -40 -5 -80 -10 -120 -15 -160 3,1 3,25 time(us) 3,4 3,55 3,7 14,9 kW 2,81 mJ 0,61 us Turn-off Switching Waveforms & definition of trr Output inverter FRED Output inverter IGBT 20 2,95 Id trr Uge (V) fitted Ud -50 0 50 Ugeoff= -15 Ugeon= 15 Uc(100%)= 600 Ic(100%)= 25 Qg= 269,2 100 150 Qg (nC) 200 250 300 V V V A nC Copyright by Vincotech IRRM90% IRRM100% -200 2,65 -20 IRRM10% 2,8 2,95 Ud(100%)= Id(100%)= IRRM(100%)= trr= 10 3,1 600 25 37 0,42 3,25 time(us) 3,4 3,55 3,7 3,85 V A A us Revision: 2 Final data sheet flow 90PACK1 1200V/25A V23990-P709-F-01-14 Switching definitions Figure 9. Turn-on Switching Waveforms & definition of tQrr (tQrr= integrating time for Qrr) Output inverter FRED Figure 10. Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) Output inverter FRED 150 120 Erec Qrr 100 100 Id 80 50 tErec tQint 60 0 % % -50 40 -100 20 Prec 0 -150 -20 -200 2,5 2,7 2,9 3,1 3,3 3,5 time(us) 3,7 3,9 4,1 2,5 4,3 Id(100%)= 25 A Qrr(100%)= 4,897 uC tQint= 0,88 us Copyright by Vincotech 2,7 2,9 Prec(100%)= Erec(100%)= tErec= 11 3,1 3,3 3,5 time(us) 3,7 3,9 4,1 4,3 14,9 kW 1,88 mJ 0,88 us Revision: 2 Final data sheet flow 90PACK1 1200V/25A V23990-P709-F-01-14 Output inverter application General conditions3 phase SPWM, Vgeon= Vgeoff= 15 V -15 V Figure 1. Typical avarage static loss as a function of output current Ploss=f(Iout) IGBT Figure 2. Rgoff= 32 Ω Typical avarage static loss as a function of output current FRED Ploss=f(Iout) 50 Ploss (W) 60 Ploss (W) 32 Ω Rgon= 45 Mi*cosfi=1 50 40 Mi*cosfi=-1 35 40 30 25 30 20 20 15 10 10 5 Mi*cosfi=1 Mi*cosfi=-1 0 0 0 5 10 15 20 25 Conditions: Tj=125°C Modulation index * cosfi parameter Mi*cosfi from in 30 35 40 -1,00 to 0,20 steps 0 45 50 Iout (A) 10 20 30 40 50 Iout (A) Conditions: Tj=125°C Modulation index * cosfi parameter Mi*cosfi from -1,00 to in 0,20 steps 1,00 Figure 4. Typical avarage switching loss as a function of output current FRED Ploss=f(Iout) Ploss (W) Ploss (W) Figure 3. Typical avarage switching loss as a function of output current Ploss=f(Iout) IGBT 1,00 80,0 25,0 70,0 fsw=16kHz fsw=16kHz 20,0 60,0 50,0 15,0 40,0 10,0 30,0 20,0 5,0 10,0 fsw=2kHz fsw=2kHz 0,0 0,0 0 5 10 Conditions: Switching freq. parameter 15 20 25 Tj=125°C DC link= fsw from in Copyright by Vincotech 30 35 40 0 45 (A) 50 Iout 10 Conditions: 600 V 2 kHz to * 2 steps 16 kHz Switching freq. parameter 12 20 Tj=125°C DC link= fsw from in 30 40 600 V 2 kHz to * 2 steps Iout (A) 50 16 kHz Revision: 2