Datasheet

UNISONIC TECHNOLOGIES CO., LTD
30N06-Q
60V, 30A N-CHANNEL
POWER MOSFET
Power MOSFET
1
1
TO-220F
TO-220

DESCRIPTION
The UTC 30N06-Q is a low voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters
and battery operated products.

FEATURES
* RDS(ON) = [email protected] = 10 V, ID=15A
* Ultra low gate charge ( typical 20nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
30N06L-TA3-T
30N06G-TA3-T
TO-220
30N06L-TF1-T
30N06G-TF1-T
TO-220F1
30N06L-TF2-T
30N06G-TF2-T
TO-220F2
30N06L-TF3-T
30N06G-TF3-T
TO-220F
30N06L-TM3-T
30N06G-TM3-T
TO-251
30N06L-TN3-T
30N06G-TN3-T
TO-252
30N06L-TN3-R
30N06G-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1
1
TO-220F1
TO-220F2
1
1
TO- 252
TO-251
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
1 of 8
QW-R502-979. A
30N06-Q

Power MOSFET
ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
TC = 25°C
30
A
Continuous Drain Current
ID
TC = 100°C
21.3
A
Pulsed Drain Current (Note 2)
IDM
120
A
250
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
8
mJ
TO-220
79
TO-220F/ TO-220F2
45
Power Dissipation
PD
W
TO-220F1
TO-251/TO-252
46
Junction Temperature
TJ
+150
°C
Operation Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
3. L=0.66mH, IAS=30A, VDD=25V, RG=20Ω, Starting TJ=25°C

THERMAL DATA
PARAMETER
TO-220
TO-220F/ TO-220F2
Junction to Ambient
TO-220F1
TO-251/TO-252
TO-220
TO-220F/ TO-220F2
Junction to Case
TO-220F1
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
RATING
62
UNIT
θJA
62.5
°C/W
110
1.9
θJC
2.7
°C/W
2.85
2 of 8
QW-R502-979. A
30N06-Q

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
60
V
VDS = 60 V, VGS = 0 V
10
μA
100 nA
Forward
VGS = 20V, VDS = 0 V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -20V, VDS = 0 V
-100 nA
ID =250μA,
0.06
V/°C
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 15 A
26
40
mΩ
DYNAMIC CHARACTERISTICS
900
pF
Input Capacitance
CISS
VGS = 0 V, VDS = 25 V,
Output Capacitance
COSS
250
pF
f = 1MHz
Reverse Transfer Capacitance
CRSS
85
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
50
ns
Turn-On Rise Time
tR
100
ns
VDD = 30V, ID =15 A, VGS=10V
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
160
ns
Turn-Off Fall Time
tF
100
ns
Total Gate Charge
QG
20
30
nC
VDS = 60V, VGS = 10 V,
Gate-Source Charge
QGS
6
nC
ID = 24A (Note 1, 2)
Gate-Drain Charge
QGD
9
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 30A
1.4
V
Maximum Continuous Drain-Source Diode
IS
30
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
120
A
Forward Current
Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-979. A
30N06-Q

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-979. A
30N06-Q
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

Switching Test Circuit
12V
Same Type
as D.U.T.
50kΩ
0.2μF
Switching Waveforms
QG
10V
0.3μF
VDS
QGS
QGD
VGS
DUT
1mA
VG
Charge
Gate Charge Test Circuit
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Gate Charge Waveform
Unclamped Inductive Switching Waveforms
5 of 8
QW-R502-979. A
30N06-Q
TYPICAL CHARACTERISTICS
Transfer Characteristics
On-State Characteristics
VGS
Top: 15V
10V
8V
7V
102
6V
5.5V
5V
Bottorm: 4.5V
102
4.5V
101
101
Note:
1. VDS=25V
2. 20µs Pulse Test
100
10-1
101
100
Drain-Source Voltage, VDS (V)
100
2
4 5
6 7
8 9 10
3
Gate-Source Voltage, VGS (V)
Reverse Drain Current vs. Allowable Case
Temperature
On-Resistance Variation vs. Drain Current and
Gate Voltage
100
102
80
60
150℃
VGS=10V
101
40
VGS=20V
0.0
0
20
40
60
80
25℃
*Note:
1. VGS=0V
2. 250µs Test
20
100 120
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
Gate-to-Source Voltage, VGS (V)
Drain Current, ID (A)
Capacitance (pF)

Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-979. A
30N06-Q
Drain-Source On-Resistance, RDS(ON),
(Normalized) (Ω)
TYPICAL CHARACTERISTICS(Cont.)
Drain-Source Breakdown Voltage,
BVDSS(Normalized) (V)

Power MOSFET
Maximum Safe Operating
30
100 Operation in This
Area by RDS (ON)
100µs
10
10ms
Note:
1. TC=25℃
2. TJ=150℃
3. Single Pulse
0.1
1
20
1ms
DC
1
Maximum Drain Current vs. Case Temperature
10
100
1000
Drain-Source Voltage, VDS (V)
10
0
25
50
75
100
125
150
Case Temperature, TC (℃)
Transient Thermal Response Curve
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
Note:
1. ZθJC (t) = 0.88℃/W Max.
2. Duty Factor, D=t1/t2
3. TJ -TC=PDM×ZθJC (t)
10
1
1E-5 1E-4 1E-3 0.01
0.1
Square Wave Pulse Duration, t1 (sec)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-979. A
30N06-Q
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8 of 8
QW-R502-979. A