UNISONIC TECHNOLOGIES CO., LTD 7N60-R Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. * * * * FEATURES RDS(ON) = 1.2 @ VGS = 10V, ID = 3.7A Fast Switching Capability Avalanche Energy Tested Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TF1-T 7N60G-TF1-T 7N60L-TF2-T 7N60G-TF2-T 7N60L-T2Q-T 7N60G-T2Q-T 7N60L-TQ2-R 7N60G-TQ2-R 7N60L-TQ2-T 7N60G-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 TO-262 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Tube 1 of 8 QW-R502-984. A 7N60-R Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7.4 A 7.4 A Continuous ID Drain Current Pulsed (Note 2) IDM 29.6 A 530 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 142 Power Dissipation TO-220F/TO-220F1 PD 48 W TO-220F2 50 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient TO-220/TO-262/TO-263 Junction to Case TO-220F/TO-220F1 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 0.88 2.6 2.5 UNIT °C/W °C/W 2 of 8 QW-R502-984. A 7N60-R Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 600V, VGS = 0V Forward VGS = 30V, VDS = 0V Gate- Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.7A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD =300V, ID =7.4A, RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=480V, ID=7.4A, Gate-Source Charge QGS VGS=10V (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0V, IS = 7.4 A, dIF / dt = 100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 V 1 μA 100 nA -100 nA 0.67 V/°C 2.0 4.0 1.2 0.91 V Ω 1000 1200 120 150 17 23 pF pF pF 55 110 220 180 85 140 250 210 ns ns ns ns 170 9 22 210 nC nC nC 1.4 V 7.4 A 29.6 A 320 2.4 ns μC 3 of 8 QW-R502-984. A 7N60-R Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-984. A 7N60-R Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VGS RG VDD D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit 12V 0.2µF 50kΩ 0.3µF Switching Waveforms Same Type as D.U.T. VDS VGS DUT 3mA Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-984. A 7N60-R TYPICAL CHARACTERISTICS On-State Characteristics Transfer Characteristics 10 VGS 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottorm:5.5V 10 Top: 1 1 0.1 Notes: 1. 250µs Pulse Test 2. TC=25°C 0.1 1 Notes: 1. VDS=50V 2. 250µs Pulse Test 0.1 10 4 2 6 8 Gate-Source Voltage, VGS (V) On-Resistance Variation vs. Drain Current and Gate Voltage On State Current vs. Allowable Case Temperature Reverse Drain Current, IDR (A) 10 5 VGS=20V 4 VGS=10V 3 2 1 1 Notes: 1. VGS=0V 2. 250µs Test Note: TJ=25°C 0 10 Drain-to-Source Voltage, VDS (V) 6 Drain-Source On-Resistance, RDS(ON) (Ω) Power MOSFET 0.1 0 2 4 6 8 10 12 Drain Current, ID (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Source-Drain Voltage, VSD (V) 6 of 8 QW-R502-984. A 7N60-R Drain-Source On-Resistance, RDS(ON) (Normalized) TYPICAL CHARACTERISTICS(Cont.) Drain-Source Breakdown Voltage, BVDSS (Normalized) Power MOSFET Maximum Drain Current vs. Case Temperature Transient Thermal Response Curve 7.5 1 6.25 D=0.5 5.0 0.2 0.1 0.1 3.75 0.05 0.02 2.5 0.01 Single Pulse 0.01 Notes: 1. θJC (t) = 1.18°C/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) 1.25 0 25 50 75 100 125 Case Temperature, TC (°C) 150 Safe Operating Area – 600V Operation in This Area is Limited by RDS(on) 101 100µs 1ms 10ms 100 DC Notes: 1. TJ=25°C 2. TJ=150°C 3. Single Pulse 10-1 10-2 100 101 102 600 103 Drain-Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-984. A 7N60-R Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-984. A