UNISONIC TECHNOLOGIES CO., LTD 4N65Z-E Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65Z-E is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 3.1Ω @ VGS=10V, ID=2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N65ZL- TF1-T 4N65ZG-TF1-T 4N65ZL- TN3-T 4N65ZG-TN3-T 4N65ZL- TN3-R 4N65ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220F1 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel 1 of 6 QW-R502-995. A 4N65Z-E Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 4.4 A 4.0 A Continuous ID Drain Current Pulsed (Note 2) IDM 16 A Single Pulsed (Note 3) EAS 200 mJ Avalanche Energy Repetitive (Note 2) EAR 10.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220F1 36 W Power Dissipation PD TO-252 50 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220F1 Junction to Ambient TO-252 TO-220F1 Junction to Case TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJc RATINGS 62.5 83 3.47 2.5 UNIT °С/W °С/W °С/W °С/W 2 of 6 QW-R502-995. A 4N65Z-E Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 650 V, VGS = 0 V 10 μA 5 μA Forward VGS = 20 V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -20 V, VDS = 0 V -5 μA △BVDSS/△TJ ID=250μA, Referenced to 25°C Breakdown Voltage Temperature Coefficient 0.6 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2A 2.6 3.1 Ω DYNAMIC CHARACTERISTICS 550 650 pF Input Capacitance CISS VDS =25V, VGS = 0V, Output Capacitance COSS 57 77 pF f = 1MHz Reverse Transfer Capacitance CRSS 11 15 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 50 70 ns Turn-On Rise Time tR 275 310 ns VDD =30V, ID =0.5A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 150 180 ns Turn-Off Fall Time tF 325 355 ns Total Gate Charge QG 60 nC VDS= 50V,ID=1.3A, Gate-Source Charge QGS 16 nC VGS= 10V (Note 1, 2) Gate-Drain Charge QGD 18 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4A 1.4 V Maximum Continuous Drain-Source Diode IS 4.4 A Forward Current Maximum Pulsed Drain-Source Diode ISM 17.6 A Forward Current 250 ns Reverse Recovery Time trr VGS = 0V, IS = 4.4A, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR 1.5 μC Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-995. A 4N65Z-E Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-995. A 4N65Z-E Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDD VGS RG D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-995. A 4N65Z-E Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-995. A