Datasheet

UNISONIC TECHNOLOGIES CO., LTD
7N60-M
Power MOSFET
7.4A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 7N60-M is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in switching power supplies and
adaptors.

*
*
*
*
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FEATURES
RDS(ON) = 1.2@ VGS = 10V, ID = 3.7A
Fast Switching Capability
Avalanche Energy Tested
Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-TF3-T
7N60L-TF1-T
7N60G-TF1-T
7N60L-TF2-T
7N60G-TF2-T
7N60L-T2Q-T
7N60G-T2Q-T
7N60L-TQ2-R
7N60G-TQ2-R
7N60L-TQ2-T
7N60G-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-262
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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QW-R502-996. A
7N60-M

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
7.4
A
7.4
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
29.6
A
530
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
14.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
142
Power Dissipation
TO-220F/TO-220F1
PD
48
W
TO-220F2
50
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-262/TO-263
Junction to Case
TO-220F/TO-220F1
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
62.5
0.88
2.6
2.5
UNIT
°C/W
°C/W
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QW-R502-996. A
7N60-M

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
Forward
VGS = 30V, VDS = 0V
Gate- Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 3.7A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD =300V, ID =7.4A,
RG =25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=480V, ID=7.4A,
Gate-Source Charge
QGS
VGS=10V (Note 1, 2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 7.4 A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0V, IS = 7.4 A,
dIF / dt = 100A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
600
V
1
μA
100 nA
-100 nA
0.67
V/°C
2.0
4.0
1.2
1.0
V
Ω
1000 1200
117 140
25
30
pF
pF
pF
70
135
220
160
100
160
250
190
ns
ns
ns
ns
135
10
35
160
nC
nC
nC
1.4
V
7.4
A
29.6
A
320
2.4
ns
μC
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QW-R502-996. A
7N60-M

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-996. A
7N60-M
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

RL
VDS
VGS
RG
VDD
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
12V
0.2µF
50kΩ
0.3µF
Switching Waveforms
Same
Type as
D.U.T.
VDS
VGS
DUT
3mA
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-996. A
7N60-M
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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