link

Analog Power
AMCC530C
N & P-Channel 30-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
VDS (V)
30
-30
Typical Applications:
• DC/DC Conversion
• Motor Drives
PRODUCT SUMMARY
rDS(on) (mΩ)
50 @ VGS = 10V
83 @ VGS = 4.5V
72 @ VGS = -10V
105 @ VGS = -4.5V
DFN3x3-8L
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
VDS
Drain-Source Voltage
30
-30
VGS
Gate-Source Voltage
±20
±20
TA=25°C
5.8
-4.9
ID
Continuous Drain Current a
TA=70°C
4.2
-3.5
b
IDM
Pulsed Drain Current
30
-30
a
I
3.2
-2.8
Continuous Source Current (Diode Conduction)
S
T
=25°C
2.5
2.5
A
PD
Power Dissipation a
TA=70°C
1.3
1.3
TJ, Tstg
Operating Junction and Storage Temperature Range
-55 to 150
Maximum Junction-to-Ambient a
ID (A)
5.8
4.5
-4.9
-4.0
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
83
RθJA
120
Units
V
A
A
W
°C
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AMCC530C_1A
Analog Power
AMCC530C
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage
Symbol
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-Resistance a
rDS(on)
Forward Transconductance a
gfs
Diode Forward Voltage a
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
© Preliminary
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Static
VDS = VGS, ID = 250 uA (N-ch)
VDS = VGS, ID = -250 uA (P-ch)
VDS = 0 V, VGS = ±20 V
VDS = 24 V, VGS = 0 V
(N-ch)
VDS = -24 V, VGS = 0 V (P-ch)
(N-ch)
DS = 5 V, VGS = 10 V
VDS = -5 V, VGS = -10 V (P-ch)
VGS = 10 V, ID = 4.6 A
(N-ch)
VGS = 4.5 V, ID = 3.7 A (N-ch)
VGS = -10 V, ID = -3.8 A (P-ch)
VGS = -4.5 V, ID = -3.1 A (P-ch)
VDS = 15 V, ID = 4.6 A
(N-ch)
VDS = -15 V, ID = -3.8 A (P-ch)
IS = 1.6 A, VGS = 0 V
(N-ch)
IS = -1.4 A, VGS = 0 V
(P-ch)
Dynamic b
N - Channel
VDS = 15 V, VGS = 4.5 V,
ID = 4.6 A
N - Channel
VDS = 15 V, RL = 3.3 Ω, ID = 4.6 A,
VGEN = 10 V, RGEN = 6 Ω
N - Channel
VDS = 15 V, VGS = 0 V, f = 1 Mhz
P - Channel
VDS = -15 V, VGS = -4.5 V,
ID = -3.8 A
P - Channel
VDS = -15 V, RL = 4 Ω, ID = -3.8 A,
VGEN = -10 V, RGEN = 6 Ω
P - Channel
VDS = -15 V, VGS = 0 V, f = 1 Mhz
2
Min
Typ
Max
1
-1
±100
1
-1
7.5
-7.5
Unit
V
V
nA
uA
A
A
50
83
72
105
9
8
0.78
-0.83
4.4
1.1
2.2
3
11
17
5
360
56
46
4.4
0.7
2.6
4
20
19
10
467
73
58
mΩ
mΩ
S
S
V
V
nC
ns
pF
nC
ns
pF
Publication Order Number:
DS_AMCC530C_1A
Analog Power
AMCC530C
Typical Electrical Characteristics - N-channel
20
0.1
3V
0.08
0.06
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
TJ = 25°C
3.5V
0.04
4V,4.5V,6V,8V,10V
0.02
15
10
5
0
0
0
2
4
6
8
0
10
1
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
3
4
100
TJ = 25°C
ID = 4.6A
TJ = 25°C
IS - Source Current (A)
0.15
0.1
0.05
0
10
1
0.1
0.01
0
2
4
6
8
10
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
10
600
F = 1MHz
10V,8V,6V,4.5V,4V
500
6
Capacitance (pf)
8
ID - Drain Current (A)
5
2. Transfer Characteristics
0.2
RDS(on) - On-Resistance(Ω)
2
VGS - Gate-to-Source Voltage (V)
3.5V
3V
4
2
Ciss
400
300
200
Coss
100
Crss
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
5
6. Capacitance
3
Publication Order Number:
DS_AMCC530C_1A
Analog Power
AMCC530C
Typical Electrical Characteristics - N-channel
2
VDS = 15V
ID = 4.6A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
8
6
4
2
0
1.5
1
0.5
0
2
4
6
8
10
-50
-25
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
Qg - Total Gate Charge (nC)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
30
PEAK TRANSIENT POWER (W)
100
10 uS
100 uS
10
1 mS
ID Current (A)
0
10 mS
100 mS
1
1 SEC
10 SEC
100 SEC
0.1
1
DC
Idm limit
25
20
15
10
5
Limited by
RDS
0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
0.1
0.1
0.05
0.02
Single Pulse
RθJA = 120 °C /W
P(pk)
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
4
Publication Order Number:
DS_AMCC530C_1A
Analog Power
AMCC530C
0.25
10
0.2
8
TJ = 25°C
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
Typical Electrical Characteristics - P-channel
3.5V
0.15
4V
0.1
4.5V,6V,8V,10V
0.05
6
4
2
0
0
0
1
2
3
4
ID-Drain Current (A)
0
5
1
1. On-Resistance vs. Drain Current
4
5
10
TJ = 25°C
ID = -3.8A
TJ = 25°C
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
3
2. Transfer Characteristics
0.3
0.2
0.1
0
1
0.1
0.01
0
2
4
6
8
10
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
800
5
F = 1MHz
10V,8V,6V,4.5V,4V
700
4
600
Capacitance (pf)
ID - Drain Current (A)
2
VGS - Gate-to-Source Voltage (V)
3.5V
3
2
Ciss
500
400
300
200
1
Coss
100
0
Crss
0
0
0.2
0.4
0.6
0.8
0
5
10
15
20
1000
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
6. Capacitance
5
Publication Order Number:
DS_AMCC530C_1A
Analog Power
AMCC530C
Typical Electrical Characteristics - P-channel
2
VDS = -15V
ID = -3.8A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
8
6
4
2
1.5
1
0.5
0
0
2
4
6
8
-50
10
-25
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
Qg - Total Gate Charge (nC)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
100
PEAK TRANSIENT POWER (W)
30
10 uS
100 uS
10
1 mS
ID Current (A)
0
10 mS
100 mS
1
1 SEC
10 SEC
100 SEC
0.1
1
DC
Idm limit
Limited by
RDS
25
20
15
10
0
0.001
0.01
0.1
1
10
100
5
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.1
0.2
0.1
0.05
0.02
Single Pulse
RθJA(t) = r(t) + RθJA
RθJA = 120 °C /W
P(pk)
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
6
Publication Order Number:
DS_AMCC530C_1A
Analog Power
AMCC530C
Package Information
© Preliminary
7
Publication Order Number:
DS_AMCC530C_1A