Analog Power AME920NE Dual N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 20 Typical Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits PRODUCT SUMMARY rDS(on) (mΩ) 9.9 @ VGS = 4.5V 14 @ VGS = 2.5V DFN2x3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±12 TA=25°C 11 ID Continuous Drain Current a TA=70°C 9 b IDM Pulsed Drain Current 40 a I 7 Continuous Source Current (Diode Conduction) S T =25°C 1.5 A PD Power Dissipation a TA=70°C 1 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient a ID (A) 11 9 THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 83 RθJA 120 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AME920NE_1B Analog Power AME920NE Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a Diode Forward Voltage a gfs VSD Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 4.5 V, ID = 5 A VGS = 2.5 V, ID = 4 A VDS = 10 V, ID = 5 A IS = 3.5 A, VGS = 0 V Min Typ Max 0.3 ±10 1 10 15 Unit V uA uA A 9.9 14 20 0.76 mΩ S V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 10 V, VGS = 4.5 V, ID = 5 A VDS = 10 V, RL = 2 Ω, ID = 5 A, VGEN = 4.5 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 MHz 15 2.2 4.2 148 277 1616 751 1219 150 123 nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AME920NE_1B Analog Power AME920NE Typical Electrical Characteristics 0.04 10 8 0.03 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 1.8V 0.02 2V 2.5V 0.01 6 4 2 3V,3.5V,4V,4.5V,6V 0 0 0 2 4 6 8 0 10 ID-Drain Current (A) 3 2. Transfer Characteristics 0.08 100 TJ = 25°C ID = 5A TJ = 25°C 0.06 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 0.04 0.02 0 10 1 0.1 0.01 0 2 4 6 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 10 1800 F = 1MHz 6V,4.5V,4V, 3.5V,3V 8 1600 Ciss 1400 2.5V Capacitance (pf) ID - Drain Current (A) 1 2V 6 1.8V 4 1200 1000 800 600 400 2 Coss 200 0 Crss 0 0 0.05 0.1 0.15 0.2 0.25 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AME920NE_1B Analog Power AME920NE Typical Electrical Characteristics 2 VDS = 10V ID = 5A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 0 1.5 1 0.5 0 10 20 30 40 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 50 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit 45 40 35 30 25 20 15 10 5 Limited by RDS 0.01 0.1 1 10 100 0 0.001 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 RθJA = 120 °C /W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AME920NE_1B Analog Power AME920NE Package Information © Preliminary 5 Publication Order Number: DS_AME920NE_1B